CS3207 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CS3207
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 330 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 75 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 180 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0045 Ohm
Paquete / Cubierta: TO-220
Búsqueda de reemplazo de MOSFET CS3207
CS3207 Datasheet (PDF)
cs3207.pdf
CS3207N PD TC=25 330 WID VGS=10V,TC=25 180 AIDM 720 AVGS 20 V Tjm +150 Tstg -55 +150 RthJC 0.45 /W BVDSS VGS=0V,ID=0.25mA 75 VRDS on VGS=10V,ID=30A 3.6 4.5 mVGS th VDS=VGS,ID=0.25mA 2.0 4.0 Vgfs VDS=50V
jcs3205ch jcs3205sh.pdf
N N-CHANNEL MOSFET RJCS3205H Package MAIN CHARACTERISTICS ID 110 A VDSS 55 V Rdson-max 8 m @Vgs=10V Qg-typ 78nC APPLICATIONS High efficiency switch mode power supplies UPS UPS FEATURES Low gate charge
jcs3205ch jcs3205sh.pdf
N N-CHANNEL MOSFET RJCS3205H Package MAIN CHARACTERISTICS ID 110 A VDSS 55 V Rdson-max 8 m @Vgs=10V Qg-typ 78nC APPLICATIONS High efficiency switch mode power supplies UPS UPS FEATURES Low gate charge
brcs3205ra.pdf
BRCS3205RA Rev.I Jan.-2019 DATA SHEET / Descriptions N TO-220 N-CHANNEL MOSFET in a TO-220 Plastic Package. / Features Low On-Resistance, fast switching. / Applications DC/DC These devices are well suited for high efficiency switching DC/DC converters
cs3205 b8.pdf
Silicon N-Channel Power MOSFET R CS3205 B8 General Description VDSS 55 V CS3205 B8, the silicon N-channel Enhanced ID 120 A PD(TC=25) 230 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 7.6 m Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power
cs3205 a8.pdf
Silicon N-Channel Power MOSFET R CS3205 A8 VDSS 60 V General Description ID 120 A CS3205A8, the silicon N-channel Enhanced VDMOSFETs, PD (TC=25) 230 W is obtained by the self-aligned planar Technology which reduce RDS(ON)Typ 7 m the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swi
cs3205 cs5y3205.pdf
CS5Y3205N PD TC=25 100 W 0.8 W/ID VGS=10V,TC=25 18 AID VGS=10V,TC=100 18 AIDM 72 A VGS 20 VTjm +150 Tstg -55 +150 RthJC 1.25 /W BVDSS VGS=0V,ID=0.25mA 55 VRDS on VGS=10V,ID=18A 0.022 VGS
cs320.pdf
CS320 N PD TC=25 50 W 0.4 W/ ID VGS=10V,TC=25 3.3 A ID VGS=10V,TC=100 2.1 A IDM 13 A VGS 20 V Tjm +150 Tstg -55 +150 RthJC 2.5 /W RthJA 30 /W BVDSS VGS=0V,ID=0.25 mA 400 V RDS on VGS=10
cs3205a8.pdf
CS3025A860V Silicon N-Channel Power MOSFET Features Outline Fast switching. TO-220AB ESD improved capability.0.189(4.80)0.173(4.30) Low gate charge.0.409(10.50)0.378(10.10) 0.114(1.40) Low reverse transfer capacitances.0.098(1.20) 100% single pulse avalanche energy test.0.638(16.0)0.606(15.0)Marking code Mechanical dataG D S Epoxy
cs3205b8.pdf
Silicon N-Channel Power MOSFET RCS3205 B8 General Description VDSS 55 V CS3205 B8, the silicon N-channel Enhanced ID Silicon limited current 120 A PD(TC=25) 230 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 7.6 m Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transisto
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