CS3N90A3H MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CS3N90A3H

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 75 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 900 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 3 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

|VGSth|ⓘ - Tensión umbral entre puerta y fuente: 4 V

Qgⓘ - Carga de la puerta: 16 nC

trⓘ - Tiempo de subida: 32 nS

Cossⓘ - Capacitancia de salida: 44 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 5.5 Ohm

Encapsulados: TO-251

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CS3N90A3H datasheet

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 cs3n90a3h.pdf pdf_icon

CS3N90A3H

Silicon N-Channel Power MOSFET R CS3N90 A3H General Description VDSS 900 V CS3N90 A3H, the silicon N-channel Enhanced ID 3 A PD(TC=25 ) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 5 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swit

 0.1. Size:875K  wuxi china
 cs3n90a3h1-g.pdf pdf_icon

CS3N90A3H

Silicon N-Channel Power MOSFET R CS3N90 A3H1-G General Description VDSS 900 V CS3N90 A3H1-G, the silicon N-channel Enhanced ID 3 A PD(TC=25 ) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 5 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

 7.1. Size:416K  wuxi china
 cs3n90a4h.pdf pdf_icon

CS3N90A3H

Silicon N-Channel Power MOSFET R CS3N90 A4H General Description VDSS 900 V CS3N90 A4H, the silicon N-channel Enhanced ID 3 A PD(TC=25 ) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 5 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power sw

 7.2. Size:496K  wuxi china
 cs3n90a8.pdf pdf_icon

CS3N90A3H

Silicon N-Channel Power MOSFET R CS3N90 A8 General Description VDSS 900 V CS3N90 A8, the silicon N-channel Enhanced VDMOSFETs, is ID 3 A PD(TC=25 ) 80 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 5.0 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swi

MOSTRAR MÁS

Otros transistores... CS3N50B4HY, CS3N60A3, CS3N65A4H-G, CS3N70A3H-G, CS3N80A3, CS3N80A4, CS3N80A8, CS3N80FA9, AO3407, CS3N90A4H, CS3N90A8, CS3N90FA9H, CS3R50A3, CS3R50FA9, CS40N06, CS4482DY, CS4486