CS3N90A8 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CS3N90A8

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 80 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 900 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 3 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

|VGSth|ⓘ - Tensión umbral entre puerta y fuente: 4 V

Qgⓘ - Carga de la puerta: 16 nC

trⓘ - Tiempo de subida: 32 nS

Cossⓘ - Capacitancia de salida: 44 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 5.5 Ohm

Encapsulados: TO-220AB

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CS3N90A8 datasheet

 ..1. Size:496K  wuxi china
 cs3n90a8.pdf pdf_icon

CS3N90A8

Silicon N-Channel Power MOSFET R CS3N90 A8 General Description VDSS 900 V CS3N90 A8, the silicon N-channel Enhanced VDMOSFETs, is ID 3 A PD(TC=25 ) 80 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 5.0 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swi

 7.1. Size:875K  wuxi china
 cs3n90a3h1-g.pdf pdf_icon

CS3N90A8

Silicon N-Channel Power MOSFET R CS3N90 A3H1-G General Description VDSS 900 V CS3N90 A3H1-G, the silicon N-channel Enhanced ID 3 A PD(TC=25 ) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 5 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

 7.2. Size:631K  wuxi china
 cs3n90a3h.pdf pdf_icon

CS3N90A8

Silicon N-Channel Power MOSFET R CS3N90 A3H General Description VDSS 900 V CS3N90 A3H, the silicon N-channel Enhanced ID 3 A PD(TC=25 ) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 5 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swit

 7.3. Size:416K  wuxi china
 cs3n90a4h.pdf pdf_icon

CS3N90A8

Silicon N-Channel Power MOSFET R CS3N90 A4H General Description VDSS 900 V CS3N90 A4H, the silicon N-channel Enhanced ID 3 A PD(TC=25 ) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 5 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power sw

MOSTRAR MÁS

Otros transistores... CS3N65A4H-G, CS3N70A3H-G, CS3N80A3, CS3N80A4, CS3N80A8, CS3N80FA9, CS3N90A3H, CS3N90A4H, 20N50, CS3N90FA9H, CS3R50A3, CS3R50FA9, CS40N06, CS4482DY, CS4486, CS47N60, CS48N18