CS40N06 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: CS40N06
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 150 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 40 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.055 Ohm
   Paquete / Cubierta: TO-257

Búsqueda de reemplazo de MOSFET CS40N06

CS40N06 Datasheet (PDF)

..1. Size:63K china
cs40n06.pdf

CS40N06N PD TC=25 150 W 1.2 W/ID VGS=10V,TC=25 40 AIDM 60 A VGS 20 VTjm +150 Tstg -55 +150 RthJC 0.83 /W BVDSS VGS=0V,ID=0.25mA 60 VRDS on VGS=10V,ID=20A 0.055 VGS th VDS=VGS,ID=0.25mA 2.0 4.0 V

9.1. Size:1495K jilin sino
jcs40n25wt jcs40n25ant.pdf

N RN-CHANNEL MOSFET JCS40N25T Package MAIN CHARACTERISTICS ID 40 A VDSS 250 V Rdson-max 68m @Vgs=10V Qg-typ 87 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge

9.2. Size:1563K jilin sino
jcs40n25fc jcs40n25sc jcs40n25wc.pdf

N RN-CHANNEL MOSFET JCS40N25C Package MAIN CHARACTERISTICS ID 40A VDSS 250V Rdson-max@Vgs=10V 69m Qg-typ 50.3nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge UPS

9.3. Size:216K crhj
cs40n20 a8.pdf

Silicon N-Channel Power MOSFET R CS40N20 A8 General Description VDSS 200 V CS40N20 A8 the silicon N-channel Enhanced ID 40 A PD (TC=25) 250 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.054 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

9.4. Size:233K crhj
cs40n20 anh.pdf

Silicon N-Channel Power MOSFET R CS40N20 ANH General Description VDSS 200 V CS40N20 ANH the silicon N-channel Enhanced ID 40 A PD (TC=25) 250 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.054 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in vario

9.5. Size:222K crhj
cs40n20f a9h.pdf

Silicon N-Channel Power MOSFET R CS40N20F A9H General Description VDSS 200 V CS40N20FA9H the silicon N-channel Enhanced ID 40 A PD (TC=25) 250 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.054 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in variou

9.6. Size:216K crhj
cs40n20f a9e.pdf

Silicon N-Channel Power MOSFET R CS40N20F A9E General Description VDSS 200 V CS40N20F A9E the silicon N-channel Enhanced ID 40 A PD (TC=25) 250 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.047 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in vari

9.7. Size:216K wuxi china
cs40n20a8.pdf

9.8. Size:800K convert
cs40n20f cs40n20p.pdf

nvertCS40N20F,CS40N20PSuzhou Convert Semiconductor Co ., Ltd.200V N-Channel MOSFETFEATURES Proprietary New Planar Technology RDS(ON),typ.=50m @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body DiodeAPPLICATIONS DC-DC Converters DC-AC Inverters for UPS SMPS and Motor controlsDevice Marking and Package InformationDevice Package

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: BSC050N10NS5 | BSC022N04LS

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