CS40N06 Todos los transistores

 ..1. Size:63K  china
 cs40n06.pdf

CS40N06 N PD TC=25 150 W 1.2 W/ ID VGS=10V,TC=25 40 A IDM 60 A VGS 20 V Tjm +150 Tstg -55 +150 RthJC 0.83 /W BVDSS VGS=0V,ID=0.25mA 60 V RDS on VGS=10V,ID=20A 0.055 VGS th VDS=VGS,ID=0.25mA 2.0 4.0 V

 9.1. Size:1495K  jilin sino
 jcs40n25wt jcs40n25ant.pdf

N R N-CHANNEL MOSFET JCS40N25T Package MAIN CHARACTERISTICS ID 40 A VDSS 250 V Rdson-max 68m @Vgs=10V Qg-typ 87 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge

 9.2. Size:1563K  jilin sino
 jcs40n25fc jcs40n25sc jcs40n25wc.pdf

 9.3. Size:216K  crhj
 cs40n20 a8.pdf

Silicon N-Channel Power MOSFET R CS40N20 A8 General Description VDSS 200 V CS40N20 A8 the silicon N-channel Enhanced ID 40 A PD (TC=25 ) 250 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.054 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

 9.4. Size:233K  crhj
 cs40n20 anh.pdf

Silicon N-Channel Power MOSFET R CS40N20 ANH General Description VDSS 200 V CS40N20 ANH the silicon N-channel Enhanced ID 40 A PD (TC=25 ) 250 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.054 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in vario

 9.5. Size:222K  crhj
 cs40n20f a9h.pdf

Silicon N-Channel Power MOSFET R CS40N20F A9H General Description VDSS 200 V CS40N20FA9H the silicon N-channel Enhanced ID 40 A PD (TC=25 ) 250 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.054 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in variou

 9.6. Size:216K  crhj
 cs40n20f a9e.pdf

Silicon N-Channel Power MOSFET R CS40N20F A9E General Description VDSS 200 V CS40N20F A9E the silicon N-channel Enhanced ID 40 A PD (TC=25 ) 250 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.047 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in vari

 9.7. Size:216K  wuxi china
 cs40n20a8.pdf

Silicon N-Channel Power MOSFET R CS40N20 A8 General Description VDSS 200 V CS40N20 A8 the silicon N-channel Enhanced ID 40 A PD (TC=25 ) 250 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.054 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

 9.8. Size:800K  convert
 cs40n20f cs40n20p.pdf

nvert CS40N20F,CS40N20P Suzhou Convert Semiconductor Co ., Ltd. 200V N-Channel MOSFET FEATURES Proprietary New Planar Technology RDS(ON),typ.=50m @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode APPLICATIONS DC-DC Converters DC-AC Inverters for UPS SMPS and Motor controls Device Marking and Package Information Device Package