CS48N80 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CS48N80
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 111 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 70 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
|Id|ⓘ - Corriente continua de drenaje: 87 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 14 nS
Cossⓘ - Capacitancia de salida: 350 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0058 Ohm
Paquete / Cubierta: TO-220
- Selección de transistores por parámetros
CS48N80 Datasheet (PDF)
cs48n80.pdf

CS48N80 PbCS48N80Pb Free Plating Product70V,87A N-Channel Trench Process Power MOSFETGeneral Description The CS48N80 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS CS48N80capability and ultra low RDS(ON) is suitable for PWM, load (TO-220 HeatSink)switching especially for E-Bike controller applications. Features
cs48n88.pdf

CS48N88 PbCS48N88Pb Free Plating Product70V,92A N-Channel Trench Process Power MOSFETGeneral Description The CS48N88 is N-channel MOS Field Effect Transistor CS48N88designed for high current switching applications. Rugged EAS (TO-220 HeatSink)capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications. Features D
cs48n78.pdf

CS48N78 PbCS48N78Pb Free Plating Product70V,80A N-Channel Trench Process Power MOSFETGeneral Description The CS48N78 is N-channel MOS Field Effect Transistor CS48N78designed for high current switching applications. Rugged EAS (TO-220 HeatSink)capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications. Features D
cs48n18.pdf

CS48N18 PbCS48N18Pb Free Plating Product70V,158A N-Channel Trench Process Power MOSFETGeneral Description CS48N18The CS48N18 is N-channel MOS Field Effect Transistor (TO-220 HeatSink)designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications. DSGFea
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: QM3014N3 | NCE80T320 | VBK1270 | ZVN0545GTC | RJK6026DPE | IRFS52N15D | NCEP011NH25QU
History: QM3014N3 | NCE80T320 | VBK1270 | ZVN0545GTC | RJK6026DPE | IRFS52N15D | NCEP011NH25QU



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