CS48N80 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CS48N80

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 111 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 70 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 25 V

|Id|ⓘ - Corriente continua de drenaje: 87 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 14 nS

Cossⓘ - Capacitancia de salida: 350 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0058 Ohm

Encapsulados: TO-220

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CS48N80 datasheet

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CS48N80

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CS48N80

CS48N88 Pb CS48N88 Pb Free Plating Product 70V,92A N-Channel Trench Process Power MOSFET General Description The CS48N88 is N-channel MOS Field Effect Transistor CS48N88 designed for high current switching applications. Rugged EAS (TO-220 HeatSink) capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications. Features D

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CS48N80

CS48N78 Pb CS48N78 Pb Free Plating Product 70V,80A N-Channel Trench Process Power MOSFET General Description The CS48N78 is N-channel MOS Field Effect Transistor CS48N78 designed for high current switching applications. Rugged EAS (TO-220 HeatSink) capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications. Features D

 9.2. Size:781K  thinkisemi
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CS48N80

CS48N18 Pb CS48N18 Pb Free Plating Product 70V,158A N-Channel Trench Process Power MOSFET General Description CS48N18 The CS48N18 is N-channel MOS Field Effect Transistor (TO-220 HeatSink) designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications. DS G Fea

Otros transistores... CS3R50FA9, CS40N06, CS4482DY, CS4486, CS47N60, CS48N18, CS48N75, CS48N78, STP65NF06, CS48N88, CS4905S, CS4J60A3-G, CS4J60B3-G, CS4N60, CS4N60A3HD, CS4N60A3TDY, CS4N60A4HD