CS4N60FA9TDY MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CS4N60FA9TDY

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 30 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 4 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 13 nS

Cossⓘ - Capacitancia de salida: 50 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 2.5 Ohm

Encapsulados: TO-220F

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CS4N60FA9TDY datasheet

 ..1. Size:344K  wuxi china
 cs4n60fa9tdy.pdf pdf_icon

CS4N60FA9TDY

Silicon N-Channel Power MOSFET R CS4N60F A9TDY General Description VDSS 600 V CS4N60F A9TDY, the silicon N-channel ID 4 A PD(TC=25 ) 30 W Enhanced VDMOSFETs, is obtained by the self-aligned RDS(ON)Typ 2.0 planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

 5.1. Size:2765K  citcorp
 cs4n60fa9hd.pdf pdf_icon

CS4N60FA9TDY

CS4N60FA9HD 600V Silicon N-Channel Power MOSFET Features Outline Fast switching. TO-220F ESD improved capability. 0.189(4.80) 0.173(4.40) Low gate charge. 0.409(10.40) 0.378(9.60) 0.114(2.90) Low reverse transfer capacitances. 0.098(2.50) 100% single pulse avalanche energy test. 0.638(16.20) 0.606(15.40) Marking code Mechanical data G D S Ep

 5.2. Size:315K  wuxi china
 cs4n60fa9r.pdf pdf_icon

CS4N60FA9TDY

Silicon N-Channel Power MOSFET R CS4N60F A9R General Description VDSS 600 V CS4N60F A9R, the silicon N-channel Enhanced ID 4 A PD(TC=25 ) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.1 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 7.1. Size:1019K  1
 jcs4n60vb jcs4n60rb jcs4n60bb jcs4n60cb jcs4n60fb.pdf pdf_icon

CS4N60FA9TDY

N R N-CHANNEL MOSFET JCS4N60B Package MAIN CHARACTERISTICS 4.0 A ID 600 V VDSS Rdson Vgs=10V 2.4 13.3nC Qg APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge UPS

MOSTRAR MÁS

Otros transistores... CS4N60A3TDY, CS4N60A4HD, CS4N60A4TDY, CS4N60A7HD, CS4N60A8HD, CS4N60ARRD, CS4N60F, CS4N60FA9HD, AO4407A, CS4N65A3HD, CS4N65A3HDY, CS4N65A3TDY, CS4N65A4HDY, CS4N65A4TDY, CS4N65A8HD, CS4N65F, CS4N70ARHD