NDS355AN MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NDS355AN
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 0.5 W
Voltaje máximo drenador - fuente |Vds|: 30 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 1.7 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2 V
Carga de la puerta (Qg): 3.5 nC
Resistencia entre drenaje y fuente RDS(on): 0.085 Ohm
Paquete / Cubierta: SUPERSOT3
Búsqueda de reemplazo de MOSFET NDS355AN
NDS355AN Datasheet (PDF)
nds355an.pdf
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January 1997 NDS355AN N-Channel Logic Level Enhancement Mode Field Effect TransistorGeneral Description FeaturesSuperSOTTM-3 N-Channel logic level enhancement mode1.7A, 30 V, RDS(ON) = 0.125 @ VGS = 4.5 Vpower field effect transistors are produced using Fairchild'sRDS(ON) = 0.085 @ VGS = 10 V. proprietary, high cell density, DMOS technology. This very highdensity proce
nds355an.pdf
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NDS355ANN-Channel Logic Level Enhancement Mode Field Effect TransistorFeaturesGeneral Description1.7A, 30 V, RDS(ON) = 0.125 @ VGS = 4.5 VSuperSOTTM-3 N-Channel logic level enhancement RDS(ON) = 0.085 @ VGS = 10 V. mode power field effect transistors are produced using ON Semiconductor's proprietary, high cell density, DMOS Industry standard outline SOT-23 surface mou
nds355n.pdf
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March 1996 NDS355N N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description FeaturesThese N-Channel logic level enhancement mode power field 1.6A, 30V. RDS(ON) = 0.125 @ VGS = 4.5V.effect transistors are produced using Fairchild's proprietary,Proprietary package design using copper lead frame forhigh cell density, DMOS technology. This very high densi
nds355n.pdf
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Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
nds351n.pdf
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March 1996 NDS351N N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description FeaturesThese N-Channel logic level enhancement mode power 1.1A, 30V. RDS(ON) = 0.25 @ VGS = 4.5V.field effect transistors are produced using Fairchild'sProprietary package design using copper lead frame forproprietary, high cell density, DMOS technology. Thissuperior thermal
nds351an.pdf
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June 2003NDS351ANN-Channel, Logic Level, PowerTrench MOSFETGeneral Description FeaturesThese N-Channel Logic Level MOSFETs are produced 1.4 A, 30 V. RDS(ON) = 160 m @ VGS = 10 Vusing Fairchild Semiconductors advancedRDS(ON) = 250 m @ VGS = 4.5 V PowerTrench process that has been especially tailoredto minimize the on-state resistance and yet maintainsuperior switc
nds356p.pdf
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March 1996NNDS356PP-Channel Logic Level Enhancement Mode Field Effect TransistorGeneral Description FeaturesThese P-Channel logic level enhancement mode -1.1 A, -20V. RDS(ON) = 0.3 @ VGS = -4.5V.power field effect transistors are produced usingProprietary package design using copper leadNationals proprietary, high cell density, DMOSframe for superior thermal and electrical
nds352p.pdf
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March 1996NDS352P P-Channel Logic Level Enhancement Mode Field Effect TransistorGeneral Description FeaturesThese P-Channel logic level enhancement mode power -0.85A, -20V. RDS(ON) = 0.5 @ VGS = -4.5V.field effect transistors are produced using Fairchild'sProprietary package design using copper lead frame forproprietary, high cell density, DMOS technology. Thissuperior therma
nds356ap.pdf
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NDS356APP-Channel Logic Level Enhancement Mode Field Effect TransistorFeatures General Description-1.1 A, -30 V, RDS(ON) = 0.3 @ VGS=-4.5 VSuperSOTTM-3 P-Channel logic level enhancement mode RDS(ON) = 0.2 @ VGS=-10 V.power field effect transistors are produced using ON Semiconductor's proprietary, high cell density, DMOS Industry standard outline SOT-23 surface mount
nds352ap.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
nds351n.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
nds351an.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
nds352ap.pdf
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SMD Type MOSFETP-Channel MOSFETNDS352AP (KDS352AP)SOT-23-3Unit: mm+0.22.9-0.1+0.10.4 -0.1 Features3 VDS (V) =-30V ID =-0.9 A (VGS =-4.5V) RDS(ON) 0.3 (VGS =-10V)1 2+0.02+0.10.15 -0.02D 0.95 -0.1 RDS(ON) 0.5 (VGS =-4.5V)1.9+0.1-0.21.Gate2.SourceG S3.Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Ra
nds356ap.pdf
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NDS356APwww.VBsemi.twP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg TestedVDS (V) RDS(on) () Typ.ID (A)a Qg (Typ.)0.046 at VGS = - 10 V - 5.60.049 at VGS = - 6 V - 5 11.4 nC- 30APPLICATIONS0.054 at VGS = - 4.5 V -4.5 For Mobile Computing- Load Switch- Notebook Adaptor SwitchSTO-236- DC/DC Converter(SOT-23
nds352ap.pdf
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NDS352APwww.VBsemi.twP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg TestedVDS (V) RDS(on) () Typ.ID (A)a Qg (Typ.)0.046 at VGS = - 10 V - 5.60.049 at VGS = - 6 V - 5 11.4 nC- 30APPLICATIONS0.054 at VGS = - 4.5 V -4.5 For Mobile Computing- Load Switch- Notebook Adaptor SwitchSTO-236- DC/DC Converter(SOT-23
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