CS540A8 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CS540A8
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 150 W
Voltaje máximo drenador - fuente |Vds|: 100 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 33 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 37 nC
Tiempo de subida (tr): 20 nS
Conductancia de drenaje-sustrato (Cd): 300 pF
Resistencia entre drenaje y fuente RDS(on): 0.044 Ohm
Paquete / Cubierta: TO-220AB
Búsqueda de reemplazo de MOSFET CS540A8
CS540A8 Datasheet (PDF)
cs540a8.pdf
Silicon N-Channel Power MOSFET R CS540 A8 General Description VDSS 100 V CS540 A8, the silicon N-channel Enhanced ID 33 A PD(TC=25) 150 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 30 m Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swit
jcs540bt jcs540st jcs540ct jcs540ft jcs540wt.pdf
N RN-CHANNEL MOSFET JCS540T Package MAIN CHARACTERISTICS ID 33 A VDSS 100 V Rdson-max 44 m @Vgs=10V Qg-typ 37.0 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge
cs540 a4.pdf
Silicon N-Channel Power MOSFET R CS540 A4 General Description VDSS 100 V CS540 A4, the silicon N-channel Enhanced VDMOSFETs, is ID 33 A PD(TC=25) 150 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 30 m conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s
cs540 ar.pdf
Silicon N-Channel Power MOSFET R CS540 AR General Description VDSS 100 V CS540 AR, the silicon N-channel Enhanced ID 33 A PD(TC=25) 150 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 30 m Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s
cs540 b8.pdf
Silicon N-Channel Power MOSFET R CS540 B8 General Description VDSS 100 V CS540 B8, the silicon N-channel Enhanced VDMOSFETs, is ID 33 A PD(TC=25) 150 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 43 m conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swit
cs540 a8.pdf
Silicon N-Channel Power MOSFET R CS540 A8 General Description VDSS 100 V CS540 A8, the silicon N-channel Enhanced ID 33 A PD(TC=25) 150 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 30 m Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swit
cs540 a3.pdf
Silicon N-Channel Power MOSFET R CS540 A3 General Description VDSS 100 V CS540 A3, the silicon N-channel Enhanced VDMOSFETs, ID 33 A PD(TC=25) 150 W is obtained by the self-aligned planar Technology which reduce RDS(ON)Typ 30 m the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swit
cs540.pdf
CS540 N PD TC=25 100 W 0.8 W/ ID VGS=10V,TC=25 28 A ID VGS=10V,TC=100 16 A IDM 92 A VGS 20 V Tjm +150 Tstg -55 +150 RthJC 1.25 /W BVDSS VGS=0V,ID=0.25mA 100 V VGS=10V,ID=17A 0.049 0.077 RD
cs540n.pdf
CS540N N PD TC=25 130 W 0.87 W/ ID VGS=10V,TC=25 33 A ID VGS=10V,TC=100 23 A IDM 110 A VGS 20 V Tjm +150 Tstg -55 +150 RthJC 1.15 /W BVDSS VGS=0V,ID=0.25mA 100 V RDS on VGS=10V,ID=16A 0.044
cs540b8.pdf
Silicon N-Channel Power MOSFET R CS540 B8 General Description VDSS 100 V CS540 B8, the silicon N-channel Enhanced VDMOSFETs, is ID 33 A PD(TC=25) 150 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 43 m conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swit
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