CS5N60D Todos los transistores

 ..1. Size:155K  lzg
 cs5n60d.pdf

 8.1. Size:897K  jilin sino
 jcs5n60v jcs5n60r jcs5n60c jcs5n60f.pdf

N R N-CHANNEL MOSFET JCS5N60C Package MAIN CHARACTERISTICS ID 4.0 A VDSS 600 V Rdson Vgs=10V 2.5 Qg 9nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply FEATURES

 8.2. Size:976K  jilin sino
 jcs5n60vb jcs5n60rb jcs5n60cb jcs5n60fb.pdf

N R N-CHANNEL MOSFET JCS5N60B Package MAIN CHARACTERISTICS ID 5.0 A VDSS 600 V 2.4 Rdson Vgs=10V Qg 13.3nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge LED power su

 8.3. Size:160K  lzg
 cs5n60f.pdf

 8.4. Size:392K  wuxi china
 cs5n60a8h.pdf

Huajing Discrete Devices R Silicon N-Channel Power MOSFET CS5N60 A8H General Description VDSS 600 V CS5N60 A8H, the silicon N-channel Enhanced ID 5 A PD(TC=25 ) 85 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor ca

 8.5. Size:306K  wuxi china
 cs5n60a4h.pdf

Silicon N-Channel Power MOSFET R CS5N60 A4H General Description VDSS 600 V CS5N60 A4H, the silicon N-channel Enhanced ID 5 A PD(TC=25 ) 85 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 8.6. Size:333K  wuxi china
 cs5n60fa9hd.pdf

Huajing Discrete Devices R Silicon N-Channel Power MOSFET CS5N60F A9HD General Description VDSS 600 V CS5N60F A9HD, the silicon N-channel Enhanced ID 5 A PD(TC=25 ) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor