CS5N65A3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: CS5N65A3
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 85 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 15.5 nS
   Cossⓘ - Capacitancia de salida: 71 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.9 Ohm
   Paquete / Cubierta: TO-251

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CS5N65A3 Datasheet (PDF)

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cs5n65a3.pdf

Silicon N-Channel Power MOSFET R CS5N65 A3 General Description VDSS 650 V CS5N65 A3, the silicon N-channel Enhanced VDMOSFETs, is ID 5 A PD(TC=25) 85 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 1.6 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swit

7.1. Size:424K wuxi china
cs5n65a8h.pdf

Silicon N-Channel Power MOSFET R CS5N65 A8H General Description VDSS 650 V CS5N65 A8H, the silicon N-channel Enhanced ID 5 A PD(TC=25) 85 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.6 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

7.2. Size:417K wuxi china
cs5n65a7h.pdf

Silicon N-Channel Power MOSFET R CS5N65 A7H General Description VDSS 650 V CS5N65 A7H, the silicon N-channel Enhanced ID 5 A PD(TC=25) 32 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.6 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

7.3. Size:837K wuxi china
cs5n65a4.pdf

Silicon N-Channel Power MOSFET R CS5N65 A4 General Description VDSS 650 V CS5N65 A4, the silicon N-channel Enhanced VDMOSFETs, is ID 5 A PD(TC=25) 85 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 1.6 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power sw

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