NDS8410A Todos los transistores

 

NDS8410A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NDS8410A
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 10.8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.012 Ohm
   Paquete / Cubierta: SO8

 Búsqueda de reemplazo de MOSFET NDS8410A

 

NDS8410A Datasheet (PDF)

 ..1. Size:186K  fairchild semi
nds8410a.pdf

NDS8410A
NDS8410A

October 2004NDS8410ASingle 30V N-Channel PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET are produced using 10.8 A, 30 V RDS(ON) = 12 m @ VGS = 10 VFairchilds proprietary, high cell density, DMOS RDS(ON) = 17 m @ VGS = 4.5 Vtechnology. This very high density process isespecially tailored to minimize on-state resistance and Ultra-low gate ch

 7.1. Size:109K  fairchild semi
nds8410.pdf

NDS8410A
NDS8410A

February 1996 NDS8410Single N-Channel Enhancement Mode Field Effect TransistorGeneral Description Features10A, 30V. RDS(ON) = 0.015 @ VGS = 10V These N-Channel enhancement mode power field effectRDS(ON) = 0.020 @ VGS = 4.5V.transistors are produced using Fairchild's proprietary, high celldensity, DMOS technology. This very high density process isHigh density cell design

 9.1. Size:198K  fairchild semi
nds8434.pdf

NDS8410A
NDS8410A

June 1996 NDS8434Single P-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThese P-Channel enhancement mode power field effect -6.5A, -20V. RDS(ON) = 0.035 @ VGS = -4.5Vtransistors are produced using Fairchild's proprietary, high cell RDS(ON) = 0.05 @ VGS = -2.7V.density, DMOS technology. This very high density process isHigh density cell design fo

 9.2. Size:197K  fairchild semi
nds8435a.pdf

NDS8410A
NDS8410A

March 1997 NDS8435A Single P-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesSO-8 P-Channel enhancement mode power field effect-7.9 A, -30 V. RDS(ON) = 0.023 @ VGS = -10 Vtransistors are produced using Fairchild's proprietary, high cellRDS(ON) = 0.035 @ VGS = -4.5V.density, DMOS technology. This very high density process isHigh density cell

 9.3. Size:104K  fairchild semi
nds8425.pdf

NDS8410A
NDS8410A

January 2001NDS8425Single N-Channel, 2.5V Specified PowerTrench MOSFETGeneral Description FeaturesThis N-Channel 2.5V specified MOSFET is produced 7.4 A, 20 V. RDS(ON) = 0.022 @ VGS = 4.5 Vusing Fairchild Semiconductors advanced PowerRDS(ON) = 0.028 @ VGS = 2.7 VTrench process that has been especially tailored tominimize on-state resistance and

 9.4. Size:310K  onsemi
nds8434.pdf

NDS8410A
NDS8410A

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.5. Size:1458K  cn vbsemi
nds8434a.pdf

NDS8410A
NDS8410A

NDS8434Awww.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definitiona0.015 at VGS = - 4.5 V TrenchFET Power MOSFET- 13a 100 % Rg Tested0.026 at VGS = - 2.5 V - 20 20 nC- 10 Built in ESD Protection with Zener Diode0.065 at VGS = - 1.8 V - 8 Typical

 9.6. Size:1435K  cn vbsemi
nds8435a.pdf

NDS8410A
NDS8410A

NDS8435Awww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.018 at VGS = - 10 V - 9.0 TrenchFET Power MOSFET- 30 13 nC 100 % Rg Tested0.024 at VGS = - 4.5 V - 7.8APPLICATIONS Load Switch Battery SwitchS SO-8S1 8 DG S D2 7S3 6 D

 9.7. Size:823K  cn vbsemi
nds8425.pdf

NDS8410A
NDS8410A

NDS8425www.VBsemi.twN-Channel 20V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.012 at VGS = 10 V 1220 6.1 nC Optimized for High-Side Synchronous0.015 at VGS = 4.5 V 11Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side SwitchSO-

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