NDS8410A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NDS8410A
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 2.5 W
Voltaje máximo drenador - fuente |Vds|: 30 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 10.8 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 3 V
Carga de la puerta (Qg): 16 nC
Resistencia entre drenaje y fuente RDS(on): 0.012 Ohm
Paquete / Cubierta: SO8
Búsqueda de reemplazo de MOSFET NDS8410A
NDS8410A Datasheet (PDF)
nds8410a.pdf
October 2004NDS8410ASingle 30V N-Channel PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET are produced using 10.8 A, 30 V RDS(ON) = 12 m @ VGS = 10 VFairchilds proprietary, high cell density, DMOS RDS(ON) = 17 m @ VGS = 4.5 Vtechnology. This very high density process isespecially tailored to minimize on-state resistance and Ultra-low gate ch
nds8410.pdf
February 1996 NDS8410Single N-Channel Enhancement Mode Field Effect TransistorGeneral Description Features10A, 30V. RDS(ON) = 0.015 @ VGS = 10V These N-Channel enhancement mode power field effectRDS(ON) = 0.020 @ VGS = 4.5V.transistors are produced using Fairchild's proprietary, high celldensity, DMOS technology. This very high density process isHigh density cell design
nds8434.pdf
June 1996 NDS8434Single P-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThese P-Channel enhancement mode power field effect -6.5A, -20V. RDS(ON) = 0.035 @ VGS = -4.5Vtransistors are produced using Fairchild's proprietary, high cell RDS(ON) = 0.05 @ VGS = -2.7V.density, DMOS technology. This very high density process isHigh density cell design fo
nds8435a.pdf
March 1997 NDS8435A Single P-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesSO-8 P-Channel enhancement mode power field effect-7.9 A, -30 V. RDS(ON) = 0.023 @ VGS = -10 Vtransistors are produced using Fairchild's proprietary, high cellRDS(ON) = 0.035 @ VGS = -4.5V.density, DMOS technology. This very high density process isHigh density cell
nds8425.pdf
January 2001NDS8425Single N-Channel, 2.5V Specified PowerTrench MOSFETGeneral Description FeaturesThis N-Channel 2.5V specified MOSFET is produced 7.4 A, 20 V. RDS(ON) = 0.022 @ VGS = 4.5 Vusing Fairchild Semiconductors advanced PowerRDS(ON) = 0.028 @ VGS = 2.7 VTrench process that has been especially tailored tominimize on-state resistance and
nds8434.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
nds8434a.pdf
NDS8434Awww.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definitiona0.015 at VGS = - 4.5 V TrenchFET Power MOSFET- 13a 100 % Rg Tested0.026 at VGS = - 2.5 V - 20 20 nC- 10 Built in ESD Protection with Zener Diode0.065 at VGS = - 1.8 V - 8 Typical
nds8435a.pdf
NDS8435Awww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.018 at VGS = - 10 V - 9.0 TrenchFET Power MOSFET- 30 13 nC 100 % Rg Tested0.024 at VGS = - 4.5 V - 7.8APPLICATIONS Load Switch Battery SwitchS SO-8S1 8 DG S D2 7S3 6 D
nds8425.pdf
NDS8425www.VBsemi.twN-Channel 20V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.012 at VGS = 10 V 1220 6.1 nC Optimized for High-Side Synchronous0.015 at VGS = 4.5 V 11Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side SwitchSO-
Otros transistores... NDS0605 , NDS0610 , NDS332P , NDS351AN , NDS352AP , NDS355AN , NDS356AP , NDS7002A , IRF530 , NDS8425 , NDS8426A , NDS8434A , NDS8435A , NDS8926 , NDS8934 , NDS8936 , NDS8961 .
