CS5N90ARH-G Todos los transistores

 

CS5N90ARH-G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: CS5N90ARH-G
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 45 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 900 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 28 nS
   Cossⓘ - Capacitancia de salida: 100 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2.5 Ohm
   Paquete / Cubierta: TO-262
 

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CS5N90ARH-G Datasheet (PDF)

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CS5N90ARH-G

Silicon N-Channel Power MOSFET R CS5N90 ARH-G General Description VDSS 900 V CS5N90 ARH-G, the silicon N-channel Enhanced ID 5 A PD(TC=25) 45 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.1 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p

 8.1. Size:612K  crhj
 cs5n90 arh-g.pdf pdf_icon

CS5N90ARH-G

Silicon N-Channel Power MOSFET R CS5N90 ARH-G General Description VDSS 900 V CS5N90 ARH-G, the silicon N-channel Enhanced ID 5 A PD(TC=25) 45 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.1 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p

 8.2. Size:424K  crhj
 cs5n90f a9h.pdf pdf_icon

CS5N90ARH-G

Silicon N-Channel Power MOSFET R CS5N90F A9H General Description VDSS 900 V CS5N90F A9H, the silicon N-channel Enhanced VDMOSFETs, ID 5 A PD(TC=25) 45 W is obtained by the self-aligned planar Technology which reduce RDS(ON)Typ 2.1 the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 8.3. Size:124K  china
 cs5n90.pdf pdf_icon

CS5N90ARH-G

CS5N90 N PD TC=25 150 W 1.2 W/ ID VGS=10V,TC=25 5.0 A IDM 20 A VGS 30 V Tjm +150 Tstg -55 +150 RthJC 0.73 /W BVDSS VGS=0V,ID=0.25mA 900 V RDS on VGS=10V,ID=2.5A 1.7 3.8 VGS th VDS=VGS,ID=0

MOSTRAR MÁS

Otros transistores... CS5N65A3 , CS5N65A4 , CS5N65A7H , CS5N65A8H , CS5N65FA9H , CS5N70A4 , CS5N70FA9 , CS5N90 , 5N60 , CS5N90FA9H , CS5NB90 , CS5NJ5305 , CS5NJ540 , CS5NJ540A , CS5NJ9540 , CS5NJZ48 , CS5NM50 .

History: 2SK1868 | CED20N02 | IXTQ36N30P | IRFS9620 | SSM3K15FS | STN2NF10

 

 
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