CS60N04A4 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CS60N04A4

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 52 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 60 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 14 nS

Cossⓘ - Capacitancia de salida: 150 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.013 Ohm

Encapsulados: TO-252

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CS60N04A4 datasheet

 ..1. Size:279K  wuxi china
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CS60N04A4

Silicon N-Channel Trench MOSFET R CS60N04 A4 General Description VDSS 40 V CS60N04A4,the silicon N-channel Enhanced VDMOSFETs, RDS(ON)Typ 8.5 m is obtained by advanced trench Technology which reduce the ID 60 A conduction loss, improve switching performance and enhance PD(TC=25 ) 52 W the avalanche energy. The transistor can be used in various 1.5 V VGS

 7.1. Size:195K  crhj
cs60n04 a4.pdf pdf_icon

CS60N04A4

Silicon N-Channel Trench MOSFET R CS60N04 A4 General Description VDSS 40 V ID 60 A CS60N04A4,the silicon N-channel Enhanced VDMOSFETs, is PD(TC=25 ) 52 W obtained by advanced trench Technology which reduce RDS(ON)Typ 8.5 m the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switchi

 8.1. Size:844K  blue-rocket-elect
brcs60n02dp.pdf pdf_icon

CS60N04A4

 8.2. Size:688K  crhj
cs60n06 c4.pdf pdf_icon

CS60N04A4

Silicon N-Channel Power MOSFET R CS60N06 C4 General Description VDSS 60 V CS60N06 C4, the silicon N-channel Enhanced ID 55 A PD(TC=25 ) 150 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 8 m which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

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