CS640 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: CS640
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 125 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 18 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.18 Ohm
Paquete / Cubierta: TO-257

Búsqueda de reemplazo de MOSFET CS640

CS640 Datasheet (PDF)

..1. Size:716K crhj
cs640 a0h.pdf

Silicon N-Channel Power MOSFET R CS640 A0H General Description VDSS 200 V CS640 A0H, the silicon N-channel Enhanced ID 18 A PD(TC=25) 156 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.12 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

..2. Size:719K crhj
cs640 a8h.pdf

Silicon N-Channel Power MOSFET R CS640 A8H General Description VDSS 200 V CS640 A8H, the silicon N-channel Enhanced ID 18 A PD(TC=25) 156 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.12 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

..3. Size:125K china
cs640.pdf

CS640 N PD TC=25 125 W 1.0 W/ ID VGS=10V,TC=25 18 A ID VGS=10V,TC=100 11 A IDM 72 A VGS 20 V Tjm +150 Tstg -55 +150 RthJC 1.0 /W RthJA 62.5 /W BVDSS VGS=0V,ID=0.25mA 200 V RDS on VGS=10

0.1. Size:1439K jilin sino
jcs640s jcs640c jcs640f.pdf

N N- CHANNEL MOSFET R JCS640 MAIN CHARACTERISTICS Package ID 18.0A VDSS 200 V Rdson-max 0.18 @Vgs=10V Qg-typ 47nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge

0.2. Size:1405K jilin sino
jcs640vh jcs640rh jcs640ch jcs640fh.pdf

N N- CHANNEL MOSFET R JCS640H MAIN CHARACTERISTICS Package ID 18A VDSS 200 V Rdson-max 0.15 @Vgs=10V Qg-typ 27.5nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge

0.3. Size:1803K jilin sino
jcs640vh jcs640rh jcs640ch jcs640fh jcs640sh.pdf

0.4. Size:708K crhj
cs640f a9h.pdf

Silicon N-Channel Power MOSFET R CS640F A9H General Description VDSS 200 V CS640F A9H, the silicon N-channel Enhanced ID 18 A PD(TC=25) 55 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.12 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

0.5. Size:197K lzg
cs640f.pdf

IRFS640(CS640F) N-Channel MOSFET/N MOS : DC/DC Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. : ,, Features: Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25)

0.6. Size:828K wuxi china
cs640fa9h.pdf

Silicon N-Channel Power MOSFET R CS640F A9H General Description VDSS 200 V CS640F A9H, the silicon N-channel Enhanced VDMOSFETs, is ID 18 A PD(TC=25) 55 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 0.12 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

0.7. Size:782K wuxi china
cs640a8h.pdf

0.8. Size:836K wuxi china
cs640a0h.pdf

Silicon N-Channel Power MOSFET R CS640 A0H General Description VDSS 200 V CS640 A0H, the silicon N-channel Enhanced VDMOSFETs, is ID 18 A PD(TC=25) 156 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 0.12 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

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