CS640 Todos los transistores

 ..1. Size:716K  crhj
 cs640 a0h.pdf

Silicon N-Channel Power MOSFET R CS640 A0H General Description VDSS 200 V CS640 A0H, the silicon N-channel Enhanced ID 18 A PD(TC=25 ) 156 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.12 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 ..2. Size:719K  crhj
 cs640 a8h.pdf

Silicon N-Channel Power MOSFET R CS640 A8H General Description VDSS 200 V CS640 A8H, the silicon N-channel Enhanced ID 18 A PD(TC=25 ) 156 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.12 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

 ..3. Size:125K  china
 cs640.pdf

CS640 N PD TC=25 125 W 1.0 W/ ID VGS=10V,TC=25 18 A ID VGS=10V,TC=100 11 A IDM 72 A VGS 20 V Tjm +150 Tstg -55 +150 RthJC 1.0 /W RthJA 62.5 /W BVDSS VGS=0V,ID=0.25mA 200 V RDS on VGS=10

 0.1. Size:1439K  jilin sino
 jcs640s jcs640c jcs640f.pdf

N N- CHANNEL MOSFET R JCS640 MAIN CHARACTERISTICS Package ID 18.0A VDSS 200 V Rdson-max 0.18 @Vgs=10V Qg-typ 47nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge

 0.2. Size:1405K  jilin sino
 jcs640vh jcs640rh jcs640ch jcs640fh.pdf

 0.3. Size:1803K  jilin sino
 jcs640vh jcs640rh jcs640ch jcs640fh jcs640sh.pdf

 0.4. Size:708K  crhj
 cs640f a9h.pdf

Silicon N-Channel Power MOSFET R CS640F A9H General Description VDSS 200 V CS640F A9H, the silicon N-channel Enhanced ID 18 A PD(TC=25 ) 55 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.12 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

 0.5. Size:197K  lzg
 cs640f.pdf

 0.6. Size:828K  wuxi china
 cs640fa9h.pdf

Silicon N-Channel Power MOSFET R CS640F A9H General Description VDSS 200 V CS640F A9H, the silicon N-channel Enhanced VDMOSFETs, is ID 18 A PD(TC=25 ) 55 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 0.12 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

 0.7. Size:782K  wuxi china
 cs640a8h.pdf

Silicon N-Channel Power MOSFET R CS640 A8H General Description VDSS 200 V CS640 A8H, the silicon N-channel Enhanced ID 18 A PD(TC=25 ) 156 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.12 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

 0.8. Size:836K  wuxi china
 cs640a0h.pdf

Silicon N-Channel Power MOSFET R CS640 A0H General Description VDSS 200 V CS640 A0H, the silicon N-channel Enhanced VDMOSFETs, is ID 18 A PD(TC=25 ) 156 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 0.12 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power