NDS8434A Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NDS8434A  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 8 V

|Id|ⓘ - Corriente continua de drenaje: 7.8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.024 Ohm

Encapsulados: SO8

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NDS8434A datasheet

 ..1. Size:1458K  cn vbsemi
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NDS8434A

NDS8434A www.VBsemi.tw P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition a 0.015 at VGS = - 4.5 V TrenchFET Power MOSFET - 13 a 100 % Rg Tested 0.026 at VGS = - 2.5 V - 20 20 nC - 10 Built in ESD Protection with Zener Diode 0.065 at VGS = - 1.8 V - 8 Typical

 7.1. Size:198K  fairchild semi
 nds8434.pdf pdf_icon

NDS8434A

June 1996 NDS8434 Single P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect -6.5A, -20V. RDS(ON) = 0.035 @ VGS = -4.5V transistors are produced using Fairchild's proprietary, high cell RDS(ON) = 0.05 @ VGS = -2.7V. density, DMOS technology. This very high density process is High density cell design fo

 7.2. Size:310K  onsemi
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NDS8434A

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.1. Size:197K  fairchild semi
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NDS8434A

March 1997 NDS8435A Single P-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 P-Channel enhancement mode power field effect -7.9 A, -30 V. RDS(ON) = 0.023 @ VGS = -10 V transistors are produced using Fairchild's proprietary, high cell RDS(ON) = 0.035 @ VGS = -4.5V. density, DMOS technology. This very high density process is High density cell

MOSTRAR MÁS

Otros transistores... NDS351AN, NDS352AP, NDS355AN, NDS356AP, NDS7002A, NDS8410A, NDS8425, NDS8426A, MMIS60R580P, NDS8435A, NDS8926, NDS8934, NDS8936, NDS8961, NDS9400A, NDS9407, NDS9410A