CS6N70A4D-G Todos los transistores

 

CS6N70A4D-G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: CS6N70A4D-G
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 100 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 700 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 15.5 nC
   trⓘ - Tiempo de subida: 21 nS
   Cossⓘ - Capacitancia de salida: 77 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.8 Ohm
   Paquete / Cubierta: TO-252

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CS6N70A4D-G Datasheet (PDF)

 ..1. Size:357K  wuxi china
cs6n70a4d-g.pdf

CS6N70A4D-G CS6N70A4D-G

Silicon N-Channel Power MOSFET R CS6N70 A4D-G General Description VDSS 700 V CS6N70 A4D-G, the silicon N-channel Enhanced VDMOSFETs, ID 6 A PD(TC=25) 100 W is obtained by the self-aligned planar Technology which reduce RDS(ON)Typ 1.5 the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

 7.1. Size:360K  wuxi china
cs6n70a3d-g.pdf

CS6N70A4D-G CS6N70A4D-G

Silicon N-Channel Power MOSFET RCS6N70 A3D-G General Description VDSS 700 V CS6N70 A3D-G, the silicon N-channel Enhanced VDMOSFETs, ID 6 A PD(TC=25) 100 W is obtained by the self-aligned planar Technology which reduce RDS(ON)Typ 1.35 the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe

 8.1. Size:1070K  jilin sino
jcs6n70f.pdf

CS6N70A4D-G CS6N70A4D-G

N RN-CHANNEL MOSFET JCS6N70C Package MAIN CHARACTERISTICS ID 6.0 A VDSS 700 V Rdson-max 1.6 @Vgs=10V Qg-typ 31 nC APPLICATIONS High frequency switching mode power supply Electronic ballast UPS UPS FEATUR

 8.2. Size:1319K  jilin sino
jcs6n70vc.pdf

CS6N70A4D-G CS6N70A4D-G

N RN-CHANNEL MOSFET JCS6N70VC Package MAIN CHARACTERISTICS ID 6.0 A VDSS 700 V Rdson-max 1.6 @Vgs=10V Qg-typ 31 nC APPLICATIONS High frequency switching mode power supply Electronic ballast UPS UPS FEATU

 8.3. Size:1533K  jilin sino
jcs6n70v jcs6n70mp jcs6n70b jcs6n70s jcs6n70c jcs6n70f jcs6n70b jcs6n70r.pdf

CS6N70A4D-G CS6N70A4D-G

N RN-CHANNEL MOSFET JCS6N70C Package MAIN CHARACTERISTICS ID 6.0 A VDSS 700 V Rdson-max 1.6 @Vgs=10V Qg-typ 31 nC APPLICATIONS High frequency switching mode power supply Electronic ballast UPS UPS FEATUR

 8.4. Size:361K  crhj
cs6n70f b9d.pdf

CS6N70A4D-G CS6N70A4D-G

Silicon N-Channel Power MOSFET R CS6N70F B9D General Description VDSS 700 V CS6N70F B9D, the silicon N-channel Enhanced VDMOSFETs, ID 6 A PD(TC=25) 35 W is obtained by the self-aligned planar Technology which reduce RDS(ON)Typ 1.4 the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 8.5. Size:238K  crhj
cs6n70 a3d-g.pdf

CS6N70A4D-G CS6N70A4D-G

Silicon N-Channel Power MOSFET R CS6N70 A3D-G General Description VDSS 700 V CS6N70 A3D-G, the silicon N-channel Enhanced ID 6 A PD(TC=25) 100 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.5 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

 8.6. Size:727K  crhj
cs6n70 a3h.pdf

CS6N70A4D-G CS6N70A4D-G

Silicon N-Channel Power MOSFET R CS6N70 A3H General Description VDSS 700 V CS6N70 A3H,the silicon N-channel Enhanced ID 6 A PD(TC=25) 85 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swi

 8.7. Size:231K  crhj
cs6n70 b3d1-g.pdf

CS6N70A4D-G CS6N70A4D-G

Silicon N-Channel Power MOSFET R CS6N70 B3D1-G General Description VDSS 700 V CS6N70 B3D1-G, the silicon N-channel Enhanced ID 6 A PD(TC=25) 100 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p

 8.8. Size:357K  crhj
cs6n70 a4d-g.pdf

CS6N70A4D-G CS6N70A4D-G

Silicon N-Channel Power MOSFET R CS6N70 A4D-G General Description VDSS 700 V CS6N70 A4D-G, the silicon N-channel Enhanced VDMOSFETs, ID 6 A PD(TC=25) 100 W is obtained by the self-aligned planar Technology which reduce RDS(ON)Typ 1.5 the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

 8.9. Size:708K  crhj
cs6n70f a9h.pdf

CS6N70A4D-G CS6N70A4D-G

Silicon N-Channel Power MOSFET R CS6N70F A9H General Description VDSS 700 V CS6N70F A9H,the silicon N-channel Enhanced ID 6 A PD(TC=25) 32 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe

 8.10. Size:236K  crhj
cs6n70 a3d1-g.pdf

CS6N70A4D-G CS6N70A4D-G

Silicon N-Channel Power MOSFET RCS6N70 A3D1-G General Description VDSS 700 V CS6N70 A3D1-G, the silicon N-channel Enhanced ID 6 A PD(TC=25) 100 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.5 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p

 8.11. Size:225K  crhj
cs6n70 crhd.pdf

CS6N70A4D-G CS6N70A4D-G

Silicon N-Channel Power MOSFET R CS6N70 CRHD General Description VDSS 700 V CS6N70 CRHD, the silicon N-channel Enhanced ID 6 A PD(TC=25) 100 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.5 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

 8.12. Size:234K  crhj
cs6n70 a8d.pdf

CS6N70A4D-G CS6N70A4D-G

Silicon N-Channel Power MOSFET R CS6N70 A8D General Description VDSS 700 V CS6N70 A8D, the silicon N-channel Enhanced VDMOSFETs, is ID 6 A PD(TC=25) 100 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 1.5 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

 8.13. Size:233K  crhj
cs6n70f a9d.pdf

CS6N70A4D-G CS6N70A4D-G

Huajing Discrete Devices R Silicon N-Channel Power MOSFET CS6N70F A9D General Description VDSS 700 V CS6N70F A9D the silicon N-channel Enhanced VDMOSFETs, ID 6 A PD(TC=25) 35 W is obtained by the self-aligned planar Technology which reduce RDS(ON)Typ 1.5 the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can

 8.14. Size:361K  wuxi china
cs6n70fb9d.pdf

CS6N70A4D-G CS6N70A4D-G

Silicon N-Channel Power MOSFET R CS6N70F B9D General Description VDSS 700 V CS6N70F B9D, the silicon N-channel Enhanced VDMOSFETs, ID 6 A PD(TC=25) 35 W is obtained by the self-aligned planar Technology which reduce RDS(ON)Typ 1.4 the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 8.15. Size:348K  wuxi china
cs6n70fa9d.pdf

CS6N70A4D-G CS6N70A4D-G

Silicon N-Channel Power MOSFET R CS6N70F A9D General Description VDSS 700 V CS6N70F A9D the silicon N-channel Enhanced VDMOSFETs, ID 6 A PD(TC=25) 35 W is obtained by the self-aligned planar Technology which reduce RDS(ON)Typ 1.35 the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 8.16. Size:494K  convert
cs6n70f cs6n70k cs6n70u cs6n70d.pdf

CS6N70A4D-G CS6N70A4D-G

nvertSuzhou Convert Semiconductor Co ., Ltd.CS6N70F,CS6N70K,CS6N70U,CS6N70D700V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS6N70F TO-220F

 8.17. Size:463K  convert
cs6n70cf cs6n70ck cs6n70cu cs6n70cd.pdf

CS6N70A4D-G CS6N70A4D-G

CS6N70CF,CS6N70CK nvertSuzhou Convert Semiconductor Co ., Ltd.CS6N70CU,CS6N70CD700V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS6N70CF

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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