CS730A3RD MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: CS730A3RD
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 75 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 400 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 14.5 nC
   trⓘ - Tiempo de subida: 11 nS
   Cossⓘ - Capacitancia de salida: 68 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1 Ohm
   Paquete / Cubierta: TO-251

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CS730A3RD Datasheet (PDF)

..1. Size:224K wuxi china
cs730a3rd.pdf

Huajing Discrete Devices R Silicon N-Channel Power MOSFET CS730 A3RD General Description VDSS 400 V ID 6 A CS730 A3RD, the silicon N-channel Enhanced PD(TC=25) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.75 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can

8.1. Size:259K wuxi china
cs730a4rd.pdf

Silicon N-Channel Power MOSFET R CS730 A4RD General Description VDSS 400 V ID 6 A CS730 A4RD, the silicon N-channel Enhanced PD(TC=25) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.75 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe

8.2. Size:252K wuxi china
cs730a8rd.pdf

Silicon N-Channel Power MOSFET R CS730 A8RD General Description VDSS 400 V ID 6 A CS730 A8RD, the silicon N-channel Enhanced PD(TC=25) 75 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.75 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

9.1. Size:1785K jilin sino
jcs730vc jcs730rc jcs730sc jcs730bc jcs730cc jcs730fc.pdf

N RN-CHANNEL MOSFET JCS730C MAIN CHARACTERISTICS Package ID 5.5 A VDSS 400 V Rdson-max 1.0 @Vgs=10V Qg-typ 14 nC APPLICATIONS High frequency switching mode power supply LED Electronic ballast LED power supply

9.2. Size:811K jilin sino
jcs730v jcs730r jcs730b jcs730s jcs730c jcs730f.pdf

N RN-CHANNEL MOSFET JCS730 MAIN CHARACTERISTICS Package ID 5.5 A VDSS 400 V 1.0 RdsonVgs=10V Qg 31 nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply FEATURES

9.3. Size:190K crhj
cs730f a9rd.pdf

Silicon N-Channel Power MOSFET R CS730F A9RD General Description VDSS 400 V ID 6 A CS730F A9RD, the silicon N-channel Enhanced PD(TC=25) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.75 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

9.4. Size:253K crhj
cs730 a8rd.pdf

9.5. Size:260K crhj
cs730 a4rd.pdf

9.6. Size:199K crhj
cs730 a3rd.pdf

Silicon N-Channel Power MOSFET R CS730 A3RD General Description VDSS 400 V ID 6 A CS730 A3RD, the silicon N-channel Enhanced PD(TC=25) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.75 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

9.7. Size:222K crhj
cs730 a8h.pdf

Silicon N-Channel Power MOSFET R CS730 A8H General Description VDSS 400 V ID 6 A CS730 A8H, the silicon N-channel Enhanced PD(TC=25) 75 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.8 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swit

9.8. Size:222K crhj
cs730f a9h.pdf

Silicon N-Channel Power MOSFET R CS730F A9H General Description VDSS 400 V ID 6 A CS730F A9H, the silicon N-channel Enhanced PD(TC=25) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

9.9. Size:227K lzg
cs730f.pdf

IRFS730(CS730F) N-Channel MOSFET/N MOS : DC/DC Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. : ,, Features: Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25)

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