CS740 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CS740
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 134 W
Voltaje máximo drenador - fuente |Vds|: 400 V
Voltaje máximo fuente - puerta |Vgs|: 30 V
Corriente continua de drenaje |Id|: 10 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Tiempo de subida (tr): 75 nS
Conductancia de drenaje-sustrato (Cd): 150 pF
Resistencia entre drenaje y fuente RDS(on): 0.55 Ohm
Paquete / Cubierta: TO-220
Búsqueda de reemplazo de MOSFET CS740
CS740 Datasheet (PDF)
cs740 a0h.pdf
Silicon N-Channel Power MOSFET R CS740 A0H General Description VDSS 400 V CS740 A0H, the silicon N-channel Enhanced ID 10 A PD (TC=25) 120 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.36 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power
cs740 a8h.pdf
Silicon N-Channel Power MOSFET R CS740 A8H General Description VDSS 400 V CS740 A8H, the silicon N-channel Enhanced ID 10 A PD (TC=25) 120 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.36 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power
cs740.pdf
IRF740(CS740) N-Channel MOSFET/N MOS : DC/DC Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. : ,, Features: Low gate charge, low crss, fast switch. /Absolute maximum ratings(Ta=25)
jcs740vc jcs740rc jcs740sc jcs740bc jcs740cc jcs740fc.pdf
N RN-CHANNEL MOSFETJCS740C MAIN CHARACTERISTICS Package 10 A ID 400 V VDSS Rdson 0.54 @Vgs=10V19.7nC Qg APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge UPS
jcs740vc jcs740rc jcs740bc jcs740sc jcs740cc jcs740fc.pdf
N RN-CHANNEL MOSFET JCS740C MAIN CHARACTERISTICS Package ID 10 A VDSS 400 V Rdson-max(@Vgs=10V) 0.54 Qg 19.7nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge UPS
cs740f a9h.pdf
Silicon N-Channel Power MOSFET R CS740F A9H General Description VDSS 400 V CS740F A9H, the silicon N-channel Enhanced ID 10 A PD (TC=25) 45 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.36 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow
cs740f.pdf
IRFS740(CS740F) N-Channel MOSFET/N MOS : DC/DC Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. : ,, Features: Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25)
cs740s.pdf
IRF740S(CS740S) N-Channel MOSFET/N MOS : DC/DC Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. : ,, Features: Low gate charge, low crss, fast switch. /Absolute maximum ratings(Ta=25)
cs740fa9h.pdf
Silicon N-Channel Power MOSFET R CS740F A9H General Description VDSS 400 V CS740F A9H, the silicon N-channel Enhanced ID 10 A PD (TC=25) 45 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.36 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow
cs740a8h.pdf
Huajing Discrete Devices R Silicon N-Channel Power MOSFET CS740 A8H General Description VDSS 400 V CS740 A8H, the silicon N-channel Enhanced ID 10 A PD (TC=25) 120 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.36 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor
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