CS740 Todos los transistores

 ..1. Size:225K  crhj
 cs740 a0h.pdf

Silicon N-Channel Power MOSFET R CS740 A0H General Description VDSS 400 V CS740 A0H, the silicon N-channel Enhanced ID 10 A PD (TC=25 ) 120 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.36 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 ..2. Size:346K  crhj
 cs740 a8h.pdf

Silicon N-Channel Power MOSFET R CS740 A8H General Description VDSS 400 V CS740 A8H, the silicon N-channel Enhanced ID 10 A PD (TC=25 ) 120 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.36 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 ..3. Size:259K  lzg
 cs740.pdf

IRF740(CS740) N-Channel MOSFET/N MOS DC/DC Purpose These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. , , Features Low gate charge, low crss, fast switch. /Absolute maximum ratings(Ta=25 )

 0.1. Size:1642K  1
 jcs740vc jcs740rc jcs740sc jcs740bc jcs740cc jcs740fc.pdf

N R N-CHANNEL MOSFET JCS740C MAIN CHARACTERISTICS Package 10 A ID 400 V VDSS Rdson 0.54 @Vgs=10V 19.7nC Qg APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge UPS

 0.2. Size:2382K  jilin sino
 jcs740vc jcs740rc jcs740bc jcs740sc jcs740cc jcs740fc.pdf

 0.3. Size:337K  crhj
 cs740f a9h.pdf

Silicon N-Channel Power MOSFET R CS740F A9H General Description VDSS 400 V CS740F A9H, the silicon N-channel Enhanced ID 10 A PD (TC=25 ) 45 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.36 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

 0.4. Size:292K  lzg
 cs740f.pdf

 0.5. Size:235K  lzg
 cs740s.pdf

 0.6. Size:337K  wuxi china
 cs740fa9h.pdf

Silicon N-Channel Power MOSFET R CS740F A9H General Description VDSS 400 V CS740F A9H, the silicon N-channel Enhanced ID 10 A PD (TC=25 ) 45 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.36 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

 0.7. Size:315K  wuxi china
 cs740a8h.pdf

Huajing Discrete Devices R Silicon N-Channel Power MOSFET CS740 A8H General Description VDSS 400 V CS740 A8H, the silicon N-channel Enhanced ID 10 A PD (TC=25 ) 120 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.36 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor