CS7N60FA9HDY Todos los transistores

 ..1. Size:3164K  citcorp
 cs7n60fa9hdy.pdf

CS7N60FA9HDY 600V Silicon N-Channel Power MOSFET Features Outline Fast switching. TO-220F ESD improved capability. 0.189(4.80) 0.173(4.40) Low gate charge. 0.409(10.40) 0.378(9.60) 0.114(2.90) Low reverse transfer capacitances. 0.098(2.50) 100% single pulse avalanche energy test. 0.638(16.20) 0.606(15.40) Marking code Mechanical data G D S E

 3.1. Size:2737K  citcorp
 cs7n60fa9hd.pdf

CS7N60FA9HD 600V Silicon N-Channel Power MOSFET Features Outline Fast switching. TO-220F ESD improved capability. 0.189(4.80) 0.173(4.40) Low gate charge. 0.409(10.40) 0.378(9.60) 0.114(2.90) Low reverse transfer capacitances. 0.098(2.50) 100% single pulse avalanche energy test. 0.638(16.20) 0.606(15.40) Marking code Mechanical data G D S Ep

 3.2. Size:326K  wuxi china
 cs7n60fa9hd.pdf

Huajing Discrete Devices R Silicon N-Channel Power MOSFET CS7N60F A9HD General Description VDSS 600 V CS7N60F A9HD, the silicon N-channel Enhanced ID 7 A PD(TC=25 ) 40 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.88 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor

 7.1. Size:755K  jilin sino
 jcs7n60s jcs7n60b jcs7n60c jcs7n60f.pdf

 7.2. Size:904K  jilin sino
 jcs7n60bb jcs7n60sb jcs7n60cb jcs7n60fb.pdf

N R N-CHANNEL MOSFET JCS7N60B MAIN CHARACTERISTICS Package ID 7.0 A VDSS 600 V Rdson-max 1.2 @Vgs=10V Qg-typ 25 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge L

 7.3. Size:1774K  jilin sino
 jcs7n60v jcs7n60r jcs7n60f jcs7n60c jcs7n60b jcs7n60s.pdf

 7.4. Size:625K  crhj
 cs7n60f a9hdy.pdf

Silicon N-Channel Power MOSFET R CS7N60F A9HDY General Description VDSS 600 V CS7N60F A9HDY, the silicon N-channel Enhanced ID 7 A PD(TC=25 ) 40 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.0 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

 7.5. Size:351K  crhj
 cs7n60f a9hd.pdf

Silicon N-Channel Power MOSFET R CS7N60F A9HD General Description VDSS 600 V CS7N60F A9HD, the silicon N-channel Enhanced ID 7 A PD(TC=25 ) 40 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.88 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

 7.6. Size:269K  crhj
 cs7n60f a9r.pdf

Silicon N-Channel Power MOSFET R CS7N60F A9R General Description VDSS 600 V CS7N60F A9R, the silicon N-channel Enhanced ID 7 A PD(TC=25 ) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.0 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 7.7. Size:209K  foshan
 cs7n60f.pdf

BRF7N60(CS7N60F) N-Channel MOSFET/N MOS DC/DC Purpose These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. , , Features Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25 )

 7.8. Size:646K  convert
 cs7n60f cs7n60p.pdf

CS7N60F,CS7N60P nvert Suzhou Convert Semiconductor Co ., Ltd. 600V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking CS7N60F TO-220F CS7N60F CS7N60