CS840FA9D MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CS840FA9D

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 35 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 7 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 16.8 nS

Cossⓘ - Capacitancia de salida: 110 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.9 Ohm

Encapsulados: TO-220F

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CS840FA9D datasheet

 ..1. Size:519K  wuxi china
 cs840fa9d.pdf pdf_icon

CS840FA9D

Silicon N-Channel Power MOSFET R CS840F A9D General Description VDSS 500 V CS840F A9D, the silicon N-channel Enhanced ID 7 A PD(TC=25 ) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.68 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe

 6.1. Size:346K  wuxi china
 cs840fa9h.pdf pdf_icon

CS840FA9D

Silicon N-Channel Power MOSFET R CS840F A9H General Description VDSS 500 V CS840F A9H, the silicon N-channel Enhanced ID 8 A PD (TC=25 ) 45 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.57 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

 8.1. Size:346K  crhj
 cs840f a9h.pdf pdf_icon

CS840FA9D

Silicon N-Channel Power MOSFET R CS840F A9H General Description VDSS 500 V CS840F A9H, the silicon N-channel Enhanced ID 8 A PD (TC=25 ) 45 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.57 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

 8.2. Size:521K  crhj
 cs840f a9d.pdf pdf_icon

CS840FA9D

Silicon N-Channel Power MOSFET R CS840F A9D General Description VDSS 500 V CS840F A9D, the silicon N-channel Enhanced ID 7 A PD(TC=25 ) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.68 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe

MOSTRAR MÁS

Otros transistores... CS830A4RD, CS830A8RD, CS830F, CS830FA9RD, CS840, CS840A8D, CS840A8H, CS840F, SPP20N60C3, CS840FA9H, CS8473, CS8N25A4H, CS8N25A8H, CS8N60A8H, CS8N60F, CS8N60FA9H, CS8N65A0H