CSD13306W MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CSD13306W

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.9 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 12 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 10 V

|Id|ⓘ - Corriente continua de drenaje: 3.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 11 nS

Cossⓘ - Capacitancia de salida: 324 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0102 Ohm

Encapsulados: DSBGA

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CSD13306W datasheet

 ..1. Size:1285K  texas
 csd13306w.pdf pdf_icon

CSD13306W

Sample & Support & Product Technical Tools & Buy Community Folder Documents Software CSD13306W SLPS537 MARCH 2015 CSD13306W 12 V N Channel NexFET Power MOSFET 1 Features Product Summary 1 Ultra Low on Resistance TA = 25 C TYPICAL VALUE UNIT Low Qg and Qgd VDS Drain-to-Source Voltage 12 V Small Footprint 1 1.5 mm Qg Gate Charge Total (4.5 V) 8.6 nC Low

 7.1. Size:1103K  texas
 csd13302w.pdf pdf_icon

CSD13306W

Sample & Support & Product Technical Tools & Buy Community Folder Documents Software CSD13302W SLPS535 MARCH 2015 CSD13302W 12 V N Channel NexFET Power MOSFET 1 Features Product Summary 1 Ultra Low On Resistance TA = 25 C TYPICAL VALUE UNIT Low Qg and Qgd VDS Drain-to-Source Voltage 12 V Small Footprint 1 mm 1 mm Qg Gate Charge Total (4.5 V) 6.0 nC Low

 7.2. Size:1497K  texas
 csd13303w1015.pdf pdf_icon

CSD13306W

CSD13303W1015 www.ti.com SLPS298A MAY 2012 REVISED MAY 2012 N-Channel NexFET Power MOSFET Check for Samples CSD13303W1015 1 FEATURES PRODUCT SUMMARY Ultra Low on Resistance TA = 25 C unless otherwise stated TYPICAL VALUE UNIT Ultra Low Qg and Qgd VDS Drain to Source Voltage 12 V Small Footprint Qg Gate Charge Total (4.5V) 3.9 nC Qgd Gate Charge Gate to Drain

 8.1. Size:1297K  texas
 csd13383f4.pdf pdf_icon

CSD13306W

Sample & Support & Product Technical Tools & Buy Community Folder Documents Software CSD13383F4 SLPS517 DECEMBER 2014 CSD13383F4 12 V N-Channel FemtoFET MOSFET 1 Features Product Summary 1 Low On-Resistance TA = 25 C TYPICAL VALUE UNIT Ultra Low Qg and Qgd VDS Drain-to-Source Voltage 12 V Ultra-Small Footprint (0402 Case Size) Qg Gate Charge Total (4.5 V) 2.0 n

MOSTRAR MÁS

Otros transistores... CSY9140C, CSZ14, CSZ34, CSD024, CSD13201W10, CSD13202Q2, CSD13302W, CSD13303W1015, IRFP460, CSD13381F4, CSD13383F4, CSD15571Q2, CSD16301Q2, CSD16321Q5, CSD16322Q5, CSD16323Q3, CSD16325Q5