NDS9948 Todos los transistores

 

NDS9948 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NDS9948
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Id|ⓘ - Corriente continua de drenaje: 2.3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.25 Ohm
   Paquete / Cubierta: SO8

 Búsqueda de reemplazo de MOSFET NDS9948

 

Principales características: NDS9948

 ..1. Size:258K  fairchild semi
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NDS9948

January 2010 NDS9948 Dual 60V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of 2.3 A, 60 V RDS(ON) = 250 m @ VGS = 10 V Fairchild Semiconductor s advanced PowerTrench RDS(ON) = 500 m @ VGS = 4.5 V process. It has been optimized for power management applications requiring a wide

 ..2. Size:222K  onsemi
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NDS9948

NDS9948 Dual 60V P-Channel PowerTrench MOSFET Features General Description This P-Channel MOSFET is a rugged gate version of 2.3 A, 60 V RDS(ON) = 250 m @ VGS = 10 V ON Semiconductor s advanced PowerTrench RDS(ON) = 500 m @ VGS = 4.5 V process. It has been optimized for power management Low gate charge (9nC typical) applications requi

 0.1. Size:868K  cn vbsemi
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NDS9948

NDS9948-NL www.VBsemi.tw Dual P-Channel 6 0-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET 0.059 at VGS = - 10 V - 5.3 100 % UIS Tested RoHS - 60 17 nC COMPLIANT 0.069 at VGS = - 4.5 V - 5.0 APPLICATIONS Load Switches S1 S2 SO-8 S1 1 D1 8 G1 G2 G1 2 D1 7 S2 3 D2 6 G2 4 D2 5 Top

 8.1. Size:77K  fairchild semi
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NDS9948

May 1998 NDS9945 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 N-Channel enhancement mode power field effect 3.5 A, 60 V. RDS(ON) = 0.100 @ VGS = 10 V, transistors are produced using Fairchild's proprietary, high RDS(ON) = 0.200 @ VGS = 4.5 V. cell density, DMOS technology. This very high density process is especially tailored to

Otros transistores... NDS9407 , NDS9410A , NDS9435A , NDS9925A , NDS9933A , NDS9936 , NDS9945 , NDS9947 , EMB04N03H , NDS9953A , NDS9955 , NDS9956A , NDS9957 , NDS9959 , NDT014 , NDT014L , NDT2955 .

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