NDS9948 Datasheet. Equivalente

 ..1. Size:258K  fairchild semi
 nds9948.pdf

January 2010 NDS9948 Dual 60V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of 2.3 A, 60 V RDS(ON) = 250 m @ VGS = 10 V Fairchild Semiconductor s advanced PowerTrench RDS(ON) = 500 m @ VGS = 4.5 V process. It has been optimized for power management applications requiring a wide

 ..2. Size:222K  onsemi
 nds9948.pdf

NDS9948 Dual 60V P-Channel PowerTrench MOSFET Features General Description This P-Channel MOSFET is a rugged gate version of 2.3 A, 60 V RDS(ON) = 250 m @ VGS = 10 V ON Semiconductor s advanced PowerTrench RDS(ON) = 500 m @ VGS = 4.5 V process. It has been optimized for power management Low gate charge (9nC typical) applications requi

 0.1. Size:868K  cn vbsemi
 nds9948-nl.pdf

NDS9948-NL www.VBsemi.tw Dual P-Channel 6 0-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET 0.059 at VGS = - 10 V - 5.3 100 % UIS Tested RoHS - 60 17 nC COMPLIANT 0.069 at VGS = - 4.5 V - 5.0 APPLICATIONS Load Switches S1 S2 SO-8 S1 1 D1 8 G1 G2 G1 2 D1 7 S2 3 D2 6 G2 4 D2 5 Top

 8.1. Size:77K  fairchild semi
 nds9945.pdf

May 1998 NDS9945 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 N-Channel enhancement mode power field effect 3.5 A, 60 V. RDS(ON) = 0.100 @ VGS = 10 V, transistors are produced using Fairchild's proprietary, high RDS(ON) = 0.200 @ VGS = 4.5 V. cell density, DMOS technology. This very high density process is especially tailored to

 8.2. Size:141K  fairchild semi
 nds9947.pdf

May 2002 NDS9947 Dual 20V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of 3.5 A, 20 V RDS(ON) = 100 m @ VGS = 10 V Fairchild Semiconductor s advanced PowerTrench RDS(ON) = 190 m @ VGS = 4.5 V process. It has been optimized for power management applications requiring a wide ra

 8.3. Size:915K  cn vbsemi
 nds9945-nl.pdf

NDS9945-NL www.VBsemi.tw Dual N-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) 60 100 % Rg and UIS tested RDS(on) ( ) at VGS = 10 V 0.040 RDS(on) ( ) at VGS = 4.5 V 0.055 ID (A) per leg 7 Configuration Dual SO-8 Dual D2 D1 D2 D2 5 D1 6 D1 7 8 G1 G2 4 G2 3 3 S1 S2 S2 S2 2 2 G G1 1 1 N-Channel MOSFET N-Chann