NDS9953A Todos los transistores

 

NDS9953A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NDS9953A
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 2.9 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.13 Ohm
   Paquete / Cubierta: SO8
 

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NDS9953A Datasheet (PDF)

 ..1. Size:210K  fairchild semi
 nds9953a.pdf pdf_icon

NDS9953A

February 1996 NDS9953ADual P-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThese P-Channel enhancement mode power field effect -2.9A, -30V. RDS(ON) = 0.13 @ VGS = -10V.transistors are produced using Fairchild's proprietary, highHigh density cell design for extremely low RDS(ON).cell density, DMOS technology. This very high densityprocess is espe

 8.1. Size:209K  fairchild semi
 nds9956a.pdf pdf_icon

NDS9953A

February 1996 NDS9956ADual N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThese N-Channel enhancement mode power field effect3.7A, 30V. RDS(ON) = 0.08 @ VGS = 10Vtransistors are produced using Fairchild's proprietary, highHigh density cell design for extremely low RDS(ON).cell density, DMOS technology. This very high densityprocess is especia

 8.2. Size:208K  fairchild semi
 nds9959.pdf pdf_icon

NDS9953A

February 1996 NDS9959Dual N-Channel Enhancement Mode Field Effect Transistor General Description FeaturesThese N-Channel enhancement mode power field effect2.0A, 50V. RDS(ON) = 0.3 @ VGS = 10Vtransistors are produced using Fairchild's proprietary, high celldensity, DMOS technology. This very high density process is High density cell design for extremely low RDS(ON).especially

 8.3. Size:234K  fairchild semi
 nds9952a.pdf pdf_icon

NDS9953A

February 1996 NDS9952ADual N & P-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThese dual N- and P-channel enhancement mode powerN-Channel 3.7A, 30V, RDS(ON)=0.08 @ VGS=10V. field effect transistors are produced using Fairchild'sP-Channel -2.9A, -30V, RDS(ON)=0.13 @ VGS=-10V. proprietary, high cell density, DMOS technology. Thisvery high de

MOSTRAR MÁS

Otros transistores... NDS9410A , NDS9435A , NDS9925A , NDS9933A , NDS9936 , NDS9945 , NDS9947 , NDS9948 , MMD60R360PRH , NDS9955 , NDS9956A , NDS9957 , NDS9959 , NDT014 , NDT014L , NDT2955 , NDT3055 .

History: SSM9915K | SSF4N60 | MTB55N06Q8 | SSF6014J8 | IRFB17N60K | SSD15N10 | IRF720PBF

 

 
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