CSD16403Q5A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CSD16403Q5A
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 3.1 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 25 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 16 V
|Id|ⓘ - Corriente continua de drenaje: 28 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1.9 VQgⓘ - Carga de la puerta: 13.3 nC
trⓘ - Tiempo de subida: 27 nS
Cossⓘ - Capacitancia de salida: 1600 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0028 Ohm
Paquete / Cubierta: QFN5X6
Búsqueda de reemplazo de MOSFET CSD16403Q5A
CSD16403Q5A Datasheet (PDF)
csd16403q5a.pdf
CSD16403Q5Awww.ti.com SLPS201A AUGUST 2009 REVISED SEPTEMBER 2010N-Channel NexFET Power MOSFETsCheck for Samples: CSD16403Q5A1FEATURESPRODUCT SUMMARY2 Ultra Low Qg and QgdVDS Drain to Source Voltage 25 V Low Thermal ResistanceQg Gate Charge Total (4.5V) 13.3 nC Avalanche RatedQgd Gate Charge Gate to Drain 3.5 nC Pb Free Terminal PlatingVGS = 4.
csd16403q5a.pdf
N-Channel CICLON NexFET Power MOSFETs CSD16403Q5A Features Product Summary Ultra Low Qg & Qgd VDS 25 V DS 1 8 DS 1 8 D Qg 13.3 nC Low Thermal Resistance DS 2 7 DG S 2 7 D Qgd 3.5 nC D Avalanche Rated S DS 3 6 DS 3 6 D VGS=4.5V 2.9 m S RDS(on) DDG 4 5 DG 4 5 DVGS=10V 2.2 m Pb Free Terminal Plating S Vth 1.6 V RoHS Complia
csd16401q5.pdf
Sample & Support & ReferenceProduct Technical Tools &Buy Community DesignFolder Documents SoftwareCSD16401Q5SLPS200B AUGUST 2009 REVISED SEPTEMBER 2015CSD16401Q5 25-V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Ultralow Qg and QgdTA = 25C VALUE UNIT Low Thermal ResistanceVDS Drain-to-Source voltage 25 V Avalanche RatedQg Gate Charge,
csd16409q3.pdf
CSD16409Q3www.ti.com SLPS204A AUGUST 2009 REVISED MAY 2010N-Channel NexFET Power MOSFETsCheck for Samples: CSD16409Q31FEATURESPRODUCT SUMMARY2 Ultra Low Qg and QgdVDS Drain to Source Voltage 25 V Low Thermal ResistanceQg Gate Charge Total (4.5V) 4 nC Avalanche RatedQgd Gate Charge Gate to Drain 1 nC Pb Free Terminal PlatingVGS = 4.5V 9.5 m
csd16404q5a.pdf
CSD16404Q5Awww.ti.com SLPS198B AUGUST 2009 REVISED APRIL 2010N-Channel NexFET Power MOSFETCheck for Samples: CSD16404Q5A1FEATURESPRODUCT SUMMARY2 Ultralow Qg and QgdVDS Drain to Source Voltage 25 V Low Thermal ResistanceQg Gate Charge Total (4.5V) 6.5 nC Avalanche RatedQgd Gate Charge Gate to Drain 1.7 nC Pb Free Terminal PlatingVGS = 4.5V 5.
csd16408q5.pdf
CSD16408Q5www.ti.com SLPS228A OCTOBER 2009 REVISED SEPTEMBER 2010N-Channel NexFET Power MOSFET1FEATURESPRODUCT SUMMARY2 Ultralow Qg and QgdVDS Drain-to-source voltage 25 V Low Thermal ResistanceQg Gate charge, total (4.5 V) 6.7 nC Avalanche RatedQgd Gate charge, gate-to-drain 1.9 nC SON 5-mm 6-mm Plastic PackageVGS = 4.5 V 5.4 mrDS(on) D
csd16407q5.pdf
CSD16407Q5www.ti.com SLPS203A AUGUST 2009 REVISED SEPTEMBER 2010N-Channel NexFET Power MOSFETsCheck for Samples: CSD16407Q51FEATURESPRODUCT SUMMARY2 Ultralow Qg and QgdVDS Drain-to0source voltage 25 V Low Thermal ResistanceQg Gate charge, total (4.5 V) 13.3 nC Avalanche RatedQgd Gate charge, gate-to-drain 3.5 nC SON 5-mm 6-mm Plastic Package
csd16406q3.pdf
CSD16406Q3www.ti.com SLPS202A AUGUST 2009 REVISED SEPTEMBER 2010N-Channel NexFET Power MOSFETsCheck for Samples: CSD16406Q31FEATURESPRODUCT SUMMARY2 Ultra Low Qg and QgdVDS Drain to Source Voltage 25 V Low Thermal ResistanceQg Gate Charge Total (4.5V) 5.8 nC Avalanche RatedQgd Gate Charge Gate to Drain 1.5 nC Pb Free Terminal PlatingVGS = 4.5V
csd16409q3.pdf
N-Channel CICLON NexFET Power MOSFETs CSD16409Q3 Features Product Summary Ultra Low Qg & Qgd VDS 25 VS 1 8 DS 1 8 D Qg 4.0 nC Low Thermal Resistance G DS 2 7 DS 2 7 D Qgd 1.0 nCS D Avalanche Rated DS S 3 6 D VGS=4.5V 9.5 m S 3 6 DD RDS(on) S DDG 4 5 DG 4 5 DVGS=10V 6.2 m Pb Free Terminal Plating Vth 2.0 V RoHS Comp
csd16404q5a.pdf
N-Channel CICLON NexFET Power MOSFETs CSD16404Q5A Features Product Summary Ultra Low Qg & Qgd VDS 25 V DS 1 8 DS 1 8 D Qg 6.5 nC Low Thermal Resistance DS 2 7 DG S 2 7 D Qgd 1.7 nC D Avalanche Rated S DS 3 6 DS 3 6 D VGS=4.5V 5.7 m S RDS(on) DDG 4 5 DG 4 5 DVGS=10V 4.1 m Pb Free Terminal Plating S Vth 1.8 V RoHS Compl
csd16407q5.pdf
N-Channel CICLON NexFET Power MOSFETs CSD16407Q5 Product Summary Features Ultra Low Qg & Qgd VDS 25 V DS 1 8 DS 1 8 D Qg 13.3 nC Low Thermal Resistance DS 2 7 DG S 2 7 D Qgd 3.5 nC D Avalanche Rated S DS 3 6 DS 3 6 D VGS=4.5V 2.5 m S RDS(on) DDG 4 5 DG 4 5 DVGS=10V 1.8 m Pb Free Terminal Plating S Vth 1.6 V RoHS Compli
csd16406q3.pdf
CSD16406Q3www.VBsemi.twN-Channel 30 V (D-S) MOSFETFEATURES Halogen-free According to IEC 61249-2-21PRODUCT SUMMARY DefinitionVDS (V) RDS(on) () Typ. Qg (Typ.)ID (A) TrenchFET Power MOSFET0.004 at VGS = 4.5 V 50 100 % Rg and UIS Tested30 33.5 nC0.005 at VGS = 2.5 V 45 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Motor Control I
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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