CSD16404Q5A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CSD16404Q5A
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 3 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 25 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 16 V
|Id|ⓘ - Corriente continua de drenaje: 21 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 25 nS
Cossⓘ - Capacitancia de salida: 810 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0051 Ohm
Paquete / Cubierta: QFN5X6
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CSD16404Q5A Datasheet (PDF)
csd16404q5a.pdf

CSD16404Q5Awww.ti.com SLPS198B AUGUST 2009 REVISED APRIL 2010N-Channel NexFET Power MOSFETCheck for Samples: CSD16404Q5A1FEATURESPRODUCT SUMMARY2 Ultralow Qg and QgdVDS Drain to Source Voltage 25 V Low Thermal ResistanceQg Gate Charge Total (4.5V) 6.5 nC Avalanche RatedQgd Gate Charge Gate to Drain 1.7 nC Pb Free Terminal PlatingVGS = 4.5V 5.
csd16404q5a.pdf

N-Channel CICLON NexFET Power MOSFETs CSD16404Q5A Features Product Summary Ultra Low Qg & Qgd VDS 25 V DS 1 8 DS 1 8 D Qg 6.5 nC Low Thermal Resistance DS 2 7 DG S 2 7 D Qgd 1.7 nC D Avalanche Rated S DS 3 6 DS 3 6 D VGS=4.5V 5.7 m S RDS(on) DDG 4 5 DG 4 5 DVGS=10V 4.1 m Pb Free Terminal Plating S Vth 1.8 V RoHS Compl
csd16401q5.pdf

Sample & Support & ReferenceProduct Technical Tools &Buy Community DesignFolder Documents SoftwareCSD16401Q5SLPS200B AUGUST 2009 REVISED SEPTEMBER 2015CSD16401Q5 25-V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Ultralow Qg and QgdTA = 25C VALUE UNIT Low Thermal ResistanceVDS Drain-to-Source voltage 25 V Avalanche RatedQg Gate Charge,
csd16409q3.pdf

CSD16409Q3www.ti.com SLPS204A AUGUST 2009 REVISED MAY 2010N-Channel NexFET Power MOSFETsCheck for Samples: CSD16409Q31FEATURESPRODUCT SUMMARY2 Ultra Low Qg and QgdVDS Drain to Source Voltage 25 V Low Thermal ResistanceQg Gate Charge Total (4.5V) 4 nC Avalanche RatedQgd Gate Charge Gate to Drain 1 nC Pb Free Terminal PlatingVGS = 4.5V 9.5 m
Otros transistores... CSD16322Q5 , CSD16323Q3 , CSD16325Q5 , CSD16327Q3 , CSD16340Q3 , CSD16342Q5A , CSD16401Q5 , CSD16403Q5A , IRF9540 , CSD16406Q3 , CSD16407Q5 , CSD16408Q5 , CSD16409Q3 , CSD16410Q5A , CSD16411Q3 , CSD16412Q5A , CSD16413Q5A .
History: 2N65G-K08-5060-R | VP3203N3 | AP6N1R7CDT | AP4501AGEM-HF | SPI21N50C3 | FDU6N50F | GP2M007A065XG
History: 2N65G-K08-5060-R | VP3203N3 | AP6N1R7CDT | AP4501AGEM-HF | SPI21N50C3 | FDU6N50F | GP2M007A065XG



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