CSD16407Q5 Todos los transistores

 

CSD16407Q5 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: CSD16407Q5
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 3.1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 25 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 16 V
   |Id|ⓘ - Corriente continua de drenaje: 31 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 29 nS
   Cossⓘ - Capacitancia de salida: 1600 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0024 Ohm
   Paquete / Cubierta: QFN5X6
     - Selección de transistores por parámetros

 

CSD16407Q5 Datasheet (PDF)

 ..1. Size:206K  texas
csd16407q5.pdf pdf_icon

CSD16407Q5

CSD16407Q5www.ti.com SLPS203A AUGUST 2009 REVISED SEPTEMBER 2010N-Channel NexFET Power MOSFETsCheck for Samples: CSD16407Q51FEATURESPRODUCT SUMMARY2 Ultralow Qg and QgdVDS Drain-to0source voltage 25 V Low Thermal ResistanceQg Gate charge, total (4.5 V) 13.3 nC Avalanche RatedQgd Gate charge, gate-to-drain 3.5 nC SON 5-mm 6-mm Plastic Package

 ..2. Size:478K  ciclon
csd16407q5.pdf pdf_icon

CSD16407Q5

N-Channel CICLON NexFET Power MOSFETs CSD16407Q5 Product Summary Features Ultra Low Qg & Qgd VDS 25 V DS 1 8 DS 1 8 D Qg 13.3 nC Low Thermal Resistance DS 2 7 DG S 2 7 D Qgd 3.5 nC D Avalanche Rated S DS 3 6 DS 3 6 D VGS=4.5V 2.5 m S RDS(on) DDG 4 5 DG 4 5 DVGS=10V 1.8 m Pb Free Terminal Plating S Vth 1.6 V RoHS Compli

 7.1. Size:881K  texas
csd16401q5.pdf pdf_icon

CSD16407Q5

Sample & Support & ReferenceProduct Technical Tools &Buy Community DesignFolder Documents SoftwareCSD16401Q5SLPS200B AUGUST 2009 REVISED SEPTEMBER 2015CSD16401Q5 25-V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Ultralow Qg and QgdTA = 25C VALUE UNIT Low Thermal ResistanceVDS Drain-to-Source voltage 25 V Avalanche RatedQg Gate Charge,

 7.2. Size:196K  texas
csd16409q3.pdf pdf_icon

CSD16407Q5

CSD16409Q3www.ti.com SLPS204A AUGUST 2009 REVISED MAY 2010N-Channel NexFET Power MOSFETsCheck for Samples: CSD16409Q31FEATURESPRODUCT SUMMARY2 Ultra Low Qg and QgdVDS Drain to Source Voltage 25 V Low Thermal ResistanceQg Gate Charge Total (4.5V) 4 nC Avalanche RatedQgd Gate Charge Gate to Drain 1 nC Pb Free Terminal PlatingVGS = 4.5V 9.5 m

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: TSD12N06AT | H02N60I | P9515BD | AP9563GK | HM4612 | KPCF8402 | OSG80R900FF

 

 
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