CSD16408Q5 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CSD16408Q5
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 3.1 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 25 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 16 V
|Id|ⓘ - Corriente continua de drenaje: 22 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 25 nS
Cossⓘ - Capacitancia de salida: 760 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0045 Ohm
Paquete / Cubierta: SON5X6 SUPERSO8
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CSD16408Q5 Datasheet (PDF)
csd16408q5.pdf

CSD16408Q5www.ti.com SLPS228A OCTOBER 2009 REVISED SEPTEMBER 2010N-Channel NexFET Power MOSFET1FEATURESPRODUCT SUMMARY2 Ultralow Qg and QgdVDS Drain-to-source voltage 25 V Low Thermal ResistanceQg Gate charge, total (4.5 V) 6.7 nC Avalanche RatedQgd Gate charge, gate-to-drain 1.9 nC SON 5-mm 6-mm Plastic PackageVGS = 4.5 V 5.4 mrDS(on) D
csd16401q5.pdf

Sample & Support & ReferenceProduct Technical Tools &Buy Community DesignFolder Documents SoftwareCSD16401Q5SLPS200B AUGUST 2009 REVISED SEPTEMBER 2015CSD16401Q5 25-V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Ultralow Qg and QgdTA = 25C VALUE UNIT Low Thermal ResistanceVDS Drain-to-Source voltage 25 V Avalanche RatedQg Gate Charge,
csd16409q3.pdf

CSD16409Q3www.ti.com SLPS204A AUGUST 2009 REVISED MAY 2010N-Channel NexFET Power MOSFETsCheck for Samples: CSD16409Q31FEATURESPRODUCT SUMMARY2 Ultra Low Qg and QgdVDS Drain to Source Voltage 25 V Low Thermal ResistanceQg Gate Charge Total (4.5V) 4 nC Avalanche RatedQgd Gate Charge Gate to Drain 1 nC Pb Free Terminal PlatingVGS = 4.5V 9.5 m
csd16404q5a.pdf

CSD16404Q5Awww.ti.com SLPS198B AUGUST 2009 REVISED APRIL 2010N-Channel NexFET Power MOSFETCheck for Samples: CSD16404Q5A1FEATURESPRODUCT SUMMARY2 Ultralow Qg and QgdVDS Drain to Source Voltage 25 V Low Thermal ResistanceQg Gate Charge Total (4.5V) 6.5 nC Avalanche RatedQgd Gate Charge Gate to Drain 1.7 nC Pb Free Terminal PlatingVGS = 4.5V 5.
Otros transistores... CSD16327Q3 , CSD16340Q3 , CSD16342Q5A , CSD16401Q5 , CSD16403Q5A , CSD16404Q5A , CSD16406Q3 , CSD16407Q5 , STP75NF75 , CSD16409Q3 , CSD16410Q5A , CSD16411Q3 , CSD16412Q5A , CSD16413Q5A , CSD16414Q5 , CSD16415Q5 , CSD16556Q5B .
History: TSM2611EDCX6 | SWT20N50D | IRFSL31N20D | AON7140 | RU1H100R | BL4N80A-A
History: TSM2611EDCX6 | SWT20N50D | IRFSL31N20D | AON7140 | RU1H100R | BL4N80A-A



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