CSD16409Q3 Todos los transistores

 ..1. Size:196K  texas
 csd16409q3.pdf

CSD16409Q3 www.ti.com SLPS204A AUGUST 2009 REVISED MAY 2010 N-Channel NexFET Power MOSFETs Check for Samples CSD16409Q3 1 FEATURES PRODUCT SUMMARY 2 Ultra Low Qg and Qgd VDS Drain to Source Voltage 25 V Low Thermal Resistance Qg Gate Charge Total (4.5V) 4 nC Avalanche Rated Qgd Gate Charge Gate to Drain 1 nC Pb Free Terminal Plating VGS = 4.5V 9.5 m

 ..2. Size:473K  ciclon
 csd16409q3.pdf

N-Channel CICLON NexFET Power MOSFETs CSD16409Q3 Features Product Summary Ultra Low Qg & Qgd VDS 25 V S 1 8 D S 1 8 D Qg 4.0 nC Low Thermal Resistance G D S 2 7 D S 2 7 D Qgd 1.0 nC S D Avalanche Rated D S S 3 6 D VGS=4.5V 9.5 m S 3 6 D D RDS(on) S D D G 4 5 D G 4 5 D VGS=10V 6.2 m Pb Free Terminal Plating Vth 2.0 V RoHS Comp

 7.1. Size:881K  texas
 csd16401q5.pdf

Sample & Support & Reference Product Technical Tools & Buy Community Design Folder Documents Software CSD16401Q5 SLPS200B AUGUST 2009 REVISED SEPTEMBER 2015 CSD16401Q5 25-V N-Channel NexFET Power MOSFET 1 Features Product Summary 1 Ultralow Qg and Qgd TA = 25 C VALUE UNIT Low Thermal Resistance VDS Drain-to-Source voltage 25 V Avalanche Rated Qg Gate Charge,

 7.2. Size:741K  texas
 csd16404q5a.pdf

CSD16404Q5A www.ti.com SLPS198B AUGUST 2009 REVISED APRIL 2010 N-Channel NexFET Power MOSFET Check for Samples CSD16404Q5A 1 FEATURES PRODUCT SUMMARY 2 Ultralow Qg and Qgd VDS Drain to Source Voltage 25 V Low Thermal Resistance Qg Gate Charge Total (4.5V) 6.5 nC Avalanche Rated Qgd Gate Charge Gate to Drain 1.7 nC Pb Free Terminal Plating VGS = 4.5V 5.

 7.3. Size:696K  texas
 csd16408q5.pdf

CSD16408Q5 www.ti.com SLPS228A OCTOBER 2009 REVISED SEPTEMBER 2010 N-Channel NexFET Power MOSFET 1 FEATURES PRODUCT SUMMARY 2 Ultralow Qg and Qgd VDS Drain-to-source voltage 25 V Low Thermal Resistance Qg Gate charge, total (4.5 V) 6.7 nC Avalanche Rated Qgd Gate charge, gate-to-drain 1.9 nC SON 5-mm 6-mm Plastic Package VGS = 4.5 V 5.4 m rDS(on) D

 7.4. Size:206K  texas
 csd16407q5.pdf

CSD16407Q5 www.ti.com SLPS203A AUGUST 2009 REVISED SEPTEMBER 2010 N-Channel NexFET Power MOSFETs Check for Samples CSD16407Q5 1 FEATURES PRODUCT SUMMARY 2 Ultralow Qg and Qgd VDS Drain-to0source voltage 25 V Low Thermal Resistance Qg Gate charge, total (4.5 V) 13.3 nC Avalanche Rated Qgd Gate charge, gate-to-drain 3.5 nC SON 5-mm 6-mm Plastic Package

 7.5. Size:728K  texas
 csd16406q3.pdf

CSD16406Q3 www.ti.com SLPS202A AUGUST 2009 REVISED SEPTEMBER 2010 N-Channel NexFET Power MOSFETs Check for Samples CSD16406Q3 1 FEATURES PRODUCT SUMMARY 2 Ultra Low Qg and Qgd VDS Drain to Source Voltage 25 V Low Thermal Resistance Qg Gate Charge Total (4.5V) 5.8 nC Avalanche Rated Qgd Gate Charge Gate to Drain 1.5 nC Pb Free Terminal Plating VGS = 4.5V

 7.6. Size:345K  texas
 csd16403q5a.pdf

CSD16403Q5A www.ti.com SLPS201A AUGUST 2009 REVISED SEPTEMBER 2010 N-Channel NexFET Power MOSFETs Check for Samples CSD16403Q5A 1 FEATURES PRODUCT SUMMARY 2 Ultra Low Qg and Qgd VDS Drain to Source Voltage 25 V Low Thermal Resistance Qg Gate Charge Total (4.5V) 13.3 nC Avalanche Rated Qgd Gate Charge Gate to Drain 3.5 nC Pb Free Terminal Plating VGS = 4.

 7.7. Size:528K  ciclon
 csd16404q5a.pdf

N-Channel CICLON NexFET Power MOSFETs CSD16404Q5A Features Product Summary Ultra Low Qg & Qgd VDS 25 V D S 1 8 D S 1 8 D Qg 6.5 nC Low Thermal Resistance D S 2 7 D G S 2 7 D Qgd 1.7 nC D Avalanche Rated S D S 3 6 D S 3 6 D VGS=4.5V 5.7 m S RDS(on) D D G 4 5 D G 4 5 D VGS=10V 4.1 m Pb Free Terminal Plating S Vth 1.8 V RoHS Compl

 7.8. Size:478K  ciclon
 csd16407q5.pdf

N-Channel CICLON NexFET Power MOSFETs CSD16407Q5 Product Summary Features Ultra Low Qg & Qgd VDS 25 V D S 1 8 D S 1 8 D Qg 13.3 nC Low Thermal Resistance D S 2 7 D G S 2 7 D Qgd 3.5 nC D Avalanche Rated S D S 3 6 D S 3 6 D VGS=4.5V 2.5 m S RDS(on) D D G 4 5 D G 4 5 D VGS=10V 1.8 m Pb Free Terminal Plating S Vth 1.6 V RoHS Compli

 7.9. Size:514K  ciclon
 csd16403q5a.pdf

N-Channel CICLON NexFET Power MOSFETs CSD16403Q5A Features Product Summary Ultra Low Qg & Qgd VDS 25 V D S 1 8 D S 1 8 D Qg 13.3 nC Low Thermal Resistance D S 2 7 D G S 2 7 D Qgd 3.5 nC D Avalanche Rated S D S 3 6 D S 3 6 D VGS=4.5V 2.9 m S RDS(on) D D G 4 5 D G 4 5 D VGS=10V 2.2 m Pb Free Terminal Plating S Vth 1.6 V RoHS Complia

 7.10. Size:858K  cn vbsemi
 csd16406q3.pdf

CSD16406Q3 www.VBsemi.tw N-Channel 30 V (D-S) MOSFET FEATURES Halogen-free According to IEC 61249-2-21 PRODUCT SUMMARY Definition VDS (V) RDS(on) ( ) Typ. Qg (Typ.) ID (A) TrenchFET Power MOSFET 0.004 at VGS = 4.5 V 50 100 % Rg and UIS Tested 30 33.5 nC 0.005 at VGS = 2.5 V 45 Compliant to RoHS Directive 2002/95/EC APPLICATIONS Motor Control I