CSD17302Q5A MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CSD17302Q5A

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 3 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 10 V

|Id|ⓘ - Corriente continua de drenaje: 16 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 8.4 nS

Cossⓘ - Capacitancia de salida: 390 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0079 Ohm

Encapsulados: SON5X6 SUPERSO8

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CSD17302Q5A datasheet

 ..1. Size:883K  texas
csd17302q5a.pdf pdf_icon

CSD17302Q5A

CSD17302Q5A www.ti.com SLPS216A FEBRUARY 2010 REVISED JULY 2010 30V, N-Channel NexFET Power MOSFETs Check for Samples CSD17302Q5A 1 FEATURES PRODUCT SUMMARY 2 Optimized for 5V Gate Drive VDS Drain to Source Voltage 30 V Ultralow Qg and Qgd Qg Gate Charge Total (4.5V) 5.4 nC Low Thermal Resistance Qgd Gate Charge Gate to Drain 1.2 nC Avalanche Rated VGS

 7.1. Size:884K  texas
csd17305q5a.pdf pdf_icon

CSD17302Q5A

CSD17305Q5A www.ti.com SLPS254A FEBRUARY 2010 REVISED JULY 2010 30V, N-Channel NexFET Power MOSFETs Check for Samples CSD17305Q5A 1 FEATURES PRODUCT SUMMARY 2 Optimized for 5V Gate Drive VDS Drain to Source Voltage 30 V Ultralow Qg and Qgd Qg Gate Charge Total (4.5V) 14.1 nC Low Thermal Resistance Qgd Gate Charge Gate to Drain 3 nC Avalanche Rated VGS =

 7.2. Size:517K  texas
csd17308q3.pdf pdf_icon

CSD17302Q5A

CSD17308Q3 www.ti.com SLPS262A FEBRUARY 2010 REVISED OCTOBER 2010 30V N-Channel NexFET Power MOSFETs Check for Samples CSD17308Q3 PRODUCT SUMMARY 1 FEATURES VDS Drain to Source Voltage 30 V 2 Optimized for 5V Gate Drive Qg Gate Charge Total (4.5V) 3.9 nC Ultra Low Qg and Qgd Qgd Gate Charge Gate to Drain 0.8 nC Low Thermal Resistance VGS = 3V 12.5 m

 7.3. Size:940K  texas
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CSD17302Q5A

Sample & Support & Product Technical Tools & Buy Community Folder Documents Software CSD17309Q3 SLPS261B MARCH 2010 REVISED SEPTEMBER 2014 CSD17309Q3 30-V N-Channel NexFET Power MOSFET 1 Features Product Summary 1 Optimized for 5 V Gate Drive TA = 25 C TYPICAL VALUE UNIT Ultra-Low Qg and Qgd VDS Drain-to-Source Voltage 30 V Low Thermal Resistance Qg Gate Cha

Otros transistores... CSD16411Q3, CSD16412Q5A, CSD16413Q5A, CSD16414Q5, CSD16415Q5, CSD16556Q5B, CSD16570Q5B, CSD17301Q5A, AO3401, CSD17303Q5, CSD17304Q3, CSD17305Q5A, CSD17306Q5A, CSD17307Q5A, CSD17308Q3, CSD17309Q3, CSD17310Q5A