NDS9956A Todos los transistores

 

NDS9956A MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NDS9956A
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 3.7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.08 Ohm
   Paquete / Cubierta: SO8

 Búsqueda de reemplazo de MOSFET NDS9956A

 

Principales características: NDS9956A

 ..1. Size:209K  fairchild semi
 nds9956a.pdf pdf_icon

NDS9956A

February 1996 NDS9956A Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect 3.7A, 30V. RDS(ON) = 0.08 @ VGS = 10V transistors are produced using Fairchild's proprietary, high High density cell design for extremely low RDS(ON). cell density, DMOS technology. This very high density process is especia

 8.1. Size:210K  fairchild semi
 nds9953a.pdf pdf_icon

NDS9956A

February 1996 NDS9953A Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect -2.9A, -30V. RDS(ON) = 0.13 @ VGS = -10V. transistors are produced using Fairchild's proprietary, high High density cell design for extremely low RDS(ON). cell density, DMOS technology. This very high density process is espe

 8.2. Size:208K  fairchild semi
 nds9959.pdf pdf_icon

NDS9956A

February 1996 NDS9959 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect 2.0A, 50V. RDS(ON) = 0.3 @ VGS = 10V transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is High density cell design for extremely low RDS(ON). especially

 8.3. Size:234K  fairchild semi
 nds9952a.pdf pdf_icon

NDS9956A

February 1996 NDS9952A Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-channel enhancement mode power N-Channel 3.7A, 30V, RDS(ON)=0.08 @ VGS=10V. field effect transistors are produced using Fairchild's P-Channel -2.9A, -30V, RDS(ON)=0.13 @ VGS=-10V. proprietary, high cell density, DMOS technology. This very high de

MOSTRAR MÁS

Otros transistores... NDS9925A , NDS9933A , NDS9936 , NDS9945 , NDS9947 , NDS9948 , NDS9953A , NDS9955 , AOD4184A , NDS9957 , NDS9959 , NDT014 , NDT014L , NDT2955 , NDT3055 , NDT3055L , NDT410EL .

 

 
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