CSD17311Q5 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

CSD17311Q5www.ti.com SLPS257A MARCH 2010 REVISED SEPTEMBER 201030V N-Channel NexFET Power MOSFETCheck for Samples: CSD17311Q5PRODUCT SUMMARY1FEATURESVDS Drain to Source Voltage 30 V2 Optimized for 5V Gate DriveQg Gate Charge Total (4.5V) 24 nC Ultra Low Qg and QgdQgd Gate Charge Gate to Drain 5.2 nC Low Thermal ResistanceVGS = 3V 2.3 m Avala

CSD17310Q5Awww.ti.com SLPS255A FEBRUARY 2010 REVISED JULY 201030V, N-Channel NexFET Power MOSFETsCheck for Samples: CSD17310Q5A1FEATURESPRODUCT SUMMARY2 Optimized for 5V Gate DriveVDS Drain to Source Voltage 30 V Ultralow Qg and QgdQg Gate Charge Total (4.5V) 8.9 nC Low Thermal ResistanceQgd Gate Charge Gate to Drain 2.1 nC Avalanche RatedVGS

Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD17313Q2Q1SLPS427D OCTOBER 2012 REVISED SEPTEMBER 2015CSD17313Q2Q1 30-V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Qualified for Automotive ApplicationsTA = 25C TYPICAL VALUE UNIT Optimized for 5-V Gate DriveVDS Drain-to-Source Voltage 30 V Ultra-Low Q

CSD17313Q2www.ti.com SLPS260B MARCH 2010 REVISED OCTOBER 201030V N-Channel NexFET Power MOSFETPRODUCT SUMMARY1FEATURESVDS Drain to Source Voltage 30 V Optimized for 5V Gate DriveQg Gate Charge Total (4.5V) 2.1 nC Ultra Low Qg and QgdQgd Gate Charge Gate to Drain 0.4 nC Low Thermal ResistanceVGS = 3V 31 m Pb FreeRDS(on) Drain to Source On Resi

CSD17312Q5www.ti.com SLPS256A MARCH 2010 REVISED OCTOBER 201030V N-Channel NexFET Power MOSFETCheck for Samples: CSD17312Q5PRODUCT SUMMARY1FEATURESVDS Drain to Source Voltage 30 V2 Optimized for 5V Gate DriveQg Gate Charge Total (4.5V) 28 nC Ultra Low Qg and QgdQgd Gate Charge Gate to Drain 6 nC Low Thermal ResistanceVGS = 3V 1.8 m Avalanch