CSD17312Q5 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CSD17312Q5

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 3.2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 10 V

|Id|ⓘ - Corriente continua de drenaje: 38 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 27 nS

Cossⓘ - Capacitancia de salida: 2220 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0015 Ohm

Encapsulados: SON5X6 SUPERSO8

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CSD17312Q5 datasheet

 ..1. Size:895K  texas
 csd17312q5.pdf pdf_icon

CSD17312Q5

CSD17312Q5 www.ti.com SLPS256A MARCH 2010 REVISED OCTOBER 2010 30V N-Channel NexFET Power MOSFET Check for Samples CSD17312Q5 PRODUCT SUMMARY 1 FEATURES VDS Drain to Source Voltage 30 V 2 Optimized for 5V Gate Drive Qg Gate Charge Total (4.5V) 28 nC Ultra Low Qg and Qgd Qgd Gate Charge Gate to Drain 6 nC Low Thermal Resistance VGS = 3V 1.8 m Avalanch

 7.1. Size:883K  texas
 csd17310q5a.pdf pdf_icon

CSD17312Q5

CSD17310Q5A www.ti.com SLPS255A FEBRUARY 2010 REVISED JULY 2010 30V, N-Channel NexFET Power MOSFETs Check for Samples CSD17310Q5A 1 FEATURES PRODUCT SUMMARY 2 Optimized for 5V Gate Drive VDS Drain to Source Voltage 30 V Ultralow Qg and Qgd Qg Gate Charge Total (4.5V) 8.9 nC Low Thermal Resistance Qgd Gate Charge Gate to Drain 2.1 nC Avalanche Rated VGS

 7.2. Size:947K  texas
 csd17313q2q1.pdf pdf_icon

CSD17312Q5

Sample & Support & Product Technical Tools & Buy Community Folder Documents Software CSD17313Q2Q1 SLPS427D OCTOBER 2012 REVISED SEPTEMBER 2015 CSD17313Q2Q1 30-V N-Channel NexFET Power MOSFET 1 Features Product Summary 1 Qualified for Automotive Applications TA = 25 C TYPICAL VALUE UNIT Optimized for 5-V Gate Drive VDS Drain-to-Source Voltage 30 V Ultra-Low Q

 7.3. Size:896K  texas
 csd17311q5.pdf pdf_icon

CSD17312Q5

CSD17311Q5 www.ti.com SLPS257A MARCH 2010 REVISED SEPTEMBER 2010 30V N-Channel NexFET Power MOSFET Check for Samples CSD17311Q5 PRODUCT SUMMARY 1 FEATURES VDS Drain to Source Voltage 30 V 2 Optimized for 5V Gate Drive Qg Gate Charge Total (4.5V) 24 nC Ultra Low Qg and Qgd Qgd Gate Charge Gate to Drain 5.2 nC Low Thermal Resistance VGS = 3V 2.3 m Avala

MOSTRAR MÁS

Otros transistores... CSD17304Q3, CSD17305Q5A, CSD17306Q5A, CSD17307Q5A, CSD17308Q3, CSD17309Q3, CSD17310Q5A, CSD17311Q5, 5N65, CSD17313Q2, CSD17313Q2Q1, CSD17322Q5A, CSD17327Q5A, CSD17381F4, CSD17483F4, CSD17484F4, CSD17501Q5A