CSD17313Q2 Todos los transistores

 ..1. Size:314K  texas
 csd17313q2.pdf

CSD17313Q2 www.ti.com SLPS260B MARCH 2010 REVISED OCTOBER 2010 30V N-Channel NexFET Power MOSFET PRODUCT SUMMARY 1 FEATURES VDS Drain to Source Voltage 30 V Optimized for 5V Gate Drive Qg Gate Charge Total (4.5V) 2.1 nC Ultra Low Qg and Qgd Qgd Gate Charge Gate to Drain 0.4 nC Low Thermal Resistance VGS = 3V 31 m Pb Free RDS(on) Drain to Source On Resi

 0.1. Size:947K  texas
 csd17313q2q1.pdf

Sample & Support & Product Technical Tools & Buy Community Folder Documents Software CSD17313Q2Q1 SLPS427D OCTOBER 2012 REVISED SEPTEMBER 2015 CSD17313Q2Q1 30-V N-Channel NexFET Power MOSFET 1 Features Product Summary 1 Qualified for Automotive Applications TA = 25 C TYPICAL VALUE UNIT Optimized for 5-V Gate Drive VDS Drain-to-Source Voltage 30 V Ultra-Low Q

 7.1. Size:883K  texas
 csd17310q5a.pdf

CSD17310Q5A www.ti.com SLPS255A FEBRUARY 2010 REVISED JULY 2010 30V, N-Channel NexFET Power MOSFETs Check for Samples CSD17310Q5A 1 FEATURES PRODUCT SUMMARY 2 Optimized for 5V Gate Drive VDS Drain to Source Voltage 30 V Ultralow Qg and Qgd Qg Gate Charge Total (4.5V) 8.9 nC Low Thermal Resistance Qgd Gate Charge Gate to Drain 2.1 nC Avalanche Rated VGS

 7.2. Size:896K  texas
 csd17311q5.pdf

CSD17311Q5 www.ti.com SLPS257A MARCH 2010 REVISED SEPTEMBER 2010 30V N-Channel NexFET Power MOSFET Check for Samples CSD17311Q5 PRODUCT SUMMARY 1 FEATURES VDS Drain to Source Voltage 30 V 2 Optimized for 5V Gate Drive Qg Gate Charge Total (4.5V) 24 nC Ultra Low Qg and Qgd Qgd Gate Charge Gate to Drain 5.2 nC Low Thermal Resistance VGS = 3V 2.3 m Avala

 7.3. Size:895K  texas
 csd17312q5.pdf

CSD17312Q5 www.ti.com SLPS256A MARCH 2010 REVISED OCTOBER 2010 30V N-Channel NexFET Power MOSFET Check for Samples CSD17312Q5 PRODUCT SUMMARY 1 FEATURES VDS Drain to Source Voltage 30 V 2 Optimized for 5V Gate Drive Qg Gate Charge Total (4.5V) 28 nC Ultra Low Qg and Qgd Qgd Gate Charge Gate to Drain 6 nC Low Thermal Resistance VGS = 3V 1.8 m Avalanch