NDS9959 Todos los transistores

 

NDS9959 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NDS9959
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 50 V
   |Id|ⓘ - Corriente continua de drenaje: 2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.3 Ohm
   Paquete / Cubierta: SO8

 Búsqueda de reemplazo de MOSFET NDS9959

 

Principales características: NDS9959

 ..1. Size:208K  fairchild semi
 nds9959.pdf pdf_icon

NDS9959

February 1996 NDS9959 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect 2.0A, 50V. RDS(ON) = 0.3 @ VGS = 10V transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is High density cell design for extremely low RDS(ON). especially

 8.1. Size:209K  fairchild semi
 nds9956a.pdf pdf_icon

NDS9959

February 1996 NDS9956A Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect 3.7A, 30V. RDS(ON) = 0.08 @ VGS = 10V transistors are produced using Fairchild's proprietary, high High density cell design for extremely low RDS(ON). cell density, DMOS technology. This very high density process is especia

 8.2. Size:210K  fairchild semi
 nds9953a.pdf pdf_icon

NDS9959

February 1996 NDS9953A Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect -2.9A, -30V. RDS(ON) = 0.13 @ VGS = -10V. transistors are produced using Fairchild's proprietary, high High density cell design for extremely low RDS(ON). cell density, DMOS technology. This very high density process is espe

 8.3. Size:234K  fairchild semi
 nds9952a.pdf pdf_icon

NDS9959

February 1996 NDS9952A Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-channel enhancement mode power N-Channel 3.7A, 30V, RDS(ON)=0.08 @ VGS=10V. field effect transistors are produced using Fairchild's P-Channel -2.9A, -30V, RDS(ON)=0.13 @ VGS=-10V. proprietary, high cell density, DMOS technology. This very high de

MOSTRAR MÁS

Otros transistores... NDS9936 , NDS9945 , NDS9947 , NDS9948 , NDS9953A , NDS9955 , NDS9956A , NDS9957 , 60N06 , NDT014 , NDT014L , NDT2955 , NDT3055 , NDT3055L , NDT410EL , NDT451AN , NDT451N .

History: JMTP11DN10A

 

 
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