CSD17552Q5A Todos los transistores

 ..1. Size:739K  texas
 csd17552q5a.pdf

CSD17552Q5A www.ti.com SLPS428 NOVEMBER 2012 30-V, N-Channel NexFET Power MOSFETs Check for Samples CSD17552Q5A 1 FEATURES PRODUCT SUMMARY Ultra Low Qg and Qgd VDS Drain to Source Voltage 30 V Low Thermal Resistance Qg Gate Charge Total (4.5V) 9.0 nC Avalanche Rated Qgd Gate Charge Gate to Drain 2.0 nC VGS = 4.5V 6.1 m Pb Free Terminal Plating RDS(on) Dr

 5.1. Size:1278K  texas
 csd17552q3a.pdf

Sample & Support & Product Technical Tools & Buy Community Folder Documents Software CSD17552Q3A SLPS387A SEPTEMBER 2012 REVISED JUNE 2014 CSD17552Q3A 30V N-Channel NexFET Power MOSFETs 1 Features Product Summary 1 Ultra-Low Qg and Qgd TA = 25 C TYPICAL VALUE UNIT Low Thermal Resistance VDS Drain-to-Source Voltage 30 V Avalanche Rated Qg Gate Charge Total

 7.1. Size:1379K  texas
 csd17556q5b.pdf

Sample & Support & Product Technical Tools & Buy Community Folder Documents Software CSD17556Q5B SLPS392B MARCH 2013 REVISED OCTOBER 2014 CSD17556Q5B 30 V N-Channel NexFET Power MOSFET 1 Features Product Summary 1 Extremely Low Resistance TA = 25 C TYPICAL VALUE UNIT Ultra-Low Qg and Qgd VDS Drain-to-Source Voltage 30 V Low Thermal Resistance Qg Gate Charge

 7.2. Size:1256K  texas
 csd17551q5a.pdf

CSD17551Q5A www.ti.com SLPS375 MAY 2012 30V, N-Channel NexFET Power MOSFETs Check for Samples CSD17551Q5A 1 FEATURES PRODUCT SUMMARY Ultra Low Qg and Qgd VDS Drain to Source Voltage 30 V Low Thermal Resistance Qg Gate Charge Total (4.5V) 6.0 nC Avalanche Rated Qgd Gate Charge Gate to Drain 1.4 nC VGS = 4.5V 9 m Pb Free Terminal Plating RDS(on) Drain to S

 7.3. Size:1257K  texas
 csd17555q5a.pdf

CSD17555Q5A www.ti.com SLPS353 JUNE 2012 30V N-Channel NexFET Power MOSFETs Check for Samples CSD17555Q5A PRODUCT SUMMARY 1 FEATURES TA = 25 C unless otherwise stated TYPICAL VALUE UNIT 2 Ultralow Qg and Qgd VDS Drain to Source Voltage 30 V Low Thermal Resistance Qg Gate Charge Total (4.5V) 23 nC Avalanche Rated Qgd Gate Charge Gate to Drain 5 nC Pb Free T

 7.4. Size:1261K  texas
 csd17553q5a.pdf

CSD17553Q5A www.ti.com SLPS373 MAY 2012 30V, N-Channel NexFET Power MOSFETs Check for Samples CSD17553Q5A 1 FEATURES PRODUCT SUMMARY Ultralow Qg and Qgd VDS Drain to Source Voltage 30 V Low Thermal Resistance Qg Gate Charge Total (4.5V) 17.5 nC Avalanche Rated Qgd Gate Charge Gate to Drain 4.7 nC VGS = 4.5V 3.5 m Pb Free Terminal Plating RDS(on) Drain to

 7.5. Size:824K  texas
 csd17559q5.pdf

CSD17559Q5 www.ti.com SLPS374 NOVEMBER 2012 30V N-Channel NexFET Power MOSFETs Check for Samples CSD17559Q5 PRODUCT SUMMARY 1 FEATURES TA = 25 C unless otherwise stated TYPICAL VALUE UNIT 2 Extremely Low Resistance VDS Drain to Source Voltage 30 V Ultralow Qg and Qgd Qg Gate Charge Total (4.5V) 39 nC Low Thermal Resistance Qgd Gate Charge Gate to Drain 9.3 nC

 7.6. Size:1278K  texas
 csd17551q3a.pdf

Sample & Support & Product Technical Tools & Buy Community Folder Documents Software CSD17551Q3A SLPS386A SEPTEMBER 2012 REVISED JUNE 2014 CSD17551Q3A 30-V N-Channel NexFET Power MOSFETs 1 Features Product Summary 1 Ultra-Low Qg and Qgd TA = 25 C TYPICAL VALUE UNIT Low Thermal Resistance VDS Drain-to-Source Voltage 30 V Avalanche Rated Qg Gate Charge Total