NDT014 Todos los transistores

September 1996 NDT014 N-Channel Enhancement Mode Field Effect Transistor General Description Features Power SOT N-Channel enhancement mode power field effect 2.7A, 60V. RDS(ON) = 0.2 @ VGS = 10V. transistors are produced using Fairchild's proprietary, high cell High density cell design for extremely low RDS(ON). density, DMOS technology. This very high density process is High pow

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

August 1996 NDT014L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field 2.8 A, 60 V. RDS(ON) = 0.2 @ VGS = 4.5 V effect transistors are produced using Fairchild's proprietary, RDS(ON) = 0.16 @ VGS = 10 V. high cell density, DMOS technology.This very high density process is espe

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

NDD01N60, NDT01N60 N-Channel Power MOSFET 600 V, 8.5 W Features 100% Avalanche Tested These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http //onsemi.com Compliant V(BR)DSS RDS(ON) MAX ABSOLUTE MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 600 V 8.5 W @ 10 V Parameter Symbol NDD NDT Unit N-Channel MOSFET Drain-to-Source Voltage VDSS 600 V D (2) Continuou