NDT014 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

September 1996 NDT014N-Channel Enhancement Mode Field Effect TransistorGeneral Description Features Power SOT N-Channel enhancement mode power field effect2.7A, 60V. RDS(ON) = 0.2 @ VGS = 10V. transistors are produced using Fairchild's proprietary, high cellHigh density cell design for extremely low RDS(ON).density, DMOS technology. This very high density process isHigh pow

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

August 1996 NDT014L N-Channel Logic Level Enhancement Mode Field Effect TransistorGeneral Description FeaturesThese N-Channel logic level enhancement mode power field2.8 A, 60 V. RDS(ON) = 0.2 @ VGS = 4.5 Veffect transistors are produced using Fairchild's proprietary,RDS(ON) = 0.16 @ VGS = 10 V. high cell density, DMOS technology.This very high density process is espe

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

NDD01N60, NDT01N60N-Channel Power MOSFET600 V, 8.5 WFeatures 100% Avalanche Tested These Devices are Pb-Free, Halogen Free/BFR Free and are RoHShttp://onsemi.comCompliantV(BR)DSS RDS(ON) MAXABSOLUTE MAXIMUM RATINGS (TJ = 25C unless otherwise noted)600 V 8.5 W @ 10 VParameter Symbol NDD NDT UnitN-Channel MOSFETDrain-to-Source Voltage VDSS 600 VD (2)Continuou