CSD17575Q3 Todos los transistores

 

CSD17575Q3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: CSD17575Q3
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.8 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 27 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1.8 V
   Qgⓘ - Carga de la puerta: 23 nC
   trⓘ - Tiempo de subida: 10 nS
   Cossⓘ - Capacitancia de salida: 393 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0023 Ohm
   Paquete / Cubierta: SON3.3X3.3

 Búsqueda de reemplazo de MOSFET CSD17575Q3

 

CSD17575Q3 Datasheet (PDF)

 ..1. Size:986K  texas
csd17575q3.pdf

CSD17575Q3
CSD17575Q3

Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD17575Q3SLPS489A JUNE 2014 REVISED AUGUST 2014CSD17575Q3 30-V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low RDS(on)VDS Drain-to-Source Voltage 30 V Low Thermal ResistanceQg Gate Charge Total (4.5V) 23 nC

 7.1. Size:1198K  texas
csd17579q3a.pdf

CSD17575Q3
CSD17575Q3

Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD17579Q3ASLPS527 SEPTEMBER 2014CSD17579Q3A 30 V N-Channel NexFET Power MOSFETs1 FeaturesProduct Summary1 Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low RDS(on)VDS Drain-to-Source Voltage 30 V Low Thermal ResistanceQg Gate Charge Total (4.5 V) 5.3 nC Avalanche Rat

 7.2. Size:1000K  texas
csd17573q5b.pdf

CSD17575Q3
CSD17575Q3

Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD17573Q5BSLPS492A JUNE 2014 REVISED FEBRUARY 2015CSD17573Q5B 30 V N-Channel NexFET Power MOSFETs1 FeaturesProduct Summary1 Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Ultra-Low RDS(on)VDS Drain-to-Source Voltage 30 V Low Thermal ResistanceQg Gate Charge Total (4.5 V

 7.3. Size:1464K  texas
csd17571q2.pdf

CSD17575Q3
CSD17575Q3

Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD17571Q2SLPS393A OCTOBER 2013 REVISED JANUARY 2015CSD17571Q2 30V N-Channel NexFET Power MOSFETs1 FeaturesProduct Summary1 Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-Source Voltage 30 V Avalanche RatedQg Gate Charge Total (4.5 V)

 7.4. Size:1183K  texas
csd17570q5b.pdf

CSD17575Q3
CSD17575Q3

Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD17570Q5BSLPS471C FEBRUARY 2014 REVISED FEBRUARY 2015CSD17570Q5B 30 V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Ultra-Low ResistanceTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-Source Voltage 30 V Avalanche RatedQg Gate Charge Tot

 7.5. Size:911K  texas
csd17577q5a.pdf

CSD17575Q3
CSD17575Q3

Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD17577Q5ASLPS516 AUGUST 2014CSD17577Q5A 30-V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-Source Voltage 30 V Avalanche RatedQg Gate Charge Total (4.5 V) 13 nC Pb Free Termi

 7.6. Size:887K  texas
csd17577q3a.pdf

CSD17575Q3
CSD17575Q3

Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD17577Q3ASLPS515 AUGUST 2014CSD17577Q3A 30-V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-Source Voltage 30 V Avalanche RatedQg Gate Charge Total (4.5 V) 12 nC Pb Free Qgd G

 7.7. Size:891K  texas
csd17578q5a.pdf

CSD17575Q3
CSD17575Q3

Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD17578Q5ASLPS526 MARCH 2015CSD17578Q5A 30 V N-Channel NexFET Power MOSFETs1 FeaturesProduct Summary1 Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low RDS(on)VDS Drain-to-Source Voltage 30 V Low Thermal ResistanceQg Gate Charge Total (4.5 V) 7.9 nC Avalanche Rated

 7.8. Size:887K  texas
csd17579q5a.pdf

CSD17575Q3
CSD17575Q3

Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD17579Q5ASLPS524 MARCH 2015CSD17579Q5A 30 V N-Channel NexFET Power MOSFETs1 FeaturesProduct Summary1 Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low RDS(on)VDS Drain-to-Source Voltage 30 V Low Thermal ResistanceQg Gate Charge Total (4.5 V) 5.4 nC Avalanche Rated

 7.9. Size:983K  texas
csd17576q5b.pdf

CSD17575Q3
CSD17575Q3

Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD17576Q5BSLPS497 JUNE 2014CSD17576Q5B 30 V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low RDS(on)VDS Drain -to-Source Voltage 30 V Low Thermal ResistanceQg Gate Charge Total (4.5V) 25 nC Avalanche Rated Qgd

 7.10. Size:980K  texas
csd17578q3a.pdf

CSD17575Q3
CSD17575Q3

Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD17578Q3ASLPS525 SEPTEMBER 2014CSD17578Q3A 30 V N-Channel NexFET Power MOSFETs1 FeaturesProduct Summary1 Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low RDS(on)VDS Drain-to-Source Voltage 30 V Low Thermal ResistanceQg Gate Charge Total (4.5 V) 7.9 nC Avalanche Rat

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