CSD17576Q5B MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CSD17576Q5B
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 3.1 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 30 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 16 nS
Cossⓘ - Capacitancia de salida: 389 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.002 Ohm
Paquete / Cubierta: SON5X6
Búsqueda de reemplazo de CSD17576Q5B MOSFET
CSD17576Q5B Datasheet (PDF)
csd17576q5b.pdf

Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD17576Q5BSLPS497 JUNE 2014CSD17576Q5B 30 V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low RDS(on)VDS Drain -to-Source Voltage 30 V Low Thermal ResistanceQg Gate Charge Total (4.5V) 25 nC Avalanche Rated Qgd
csd17579q3a.pdf

Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD17579Q3ASLPS527 SEPTEMBER 2014CSD17579Q3A 30 V N-Channel NexFET Power MOSFETs1 FeaturesProduct Summary1 Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low RDS(on)VDS Drain-to-Source Voltage 30 V Low Thermal ResistanceQg Gate Charge Total (4.5 V) 5.3 nC Avalanche Rat
csd17573q5b.pdf

Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD17573Q5BSLPS492A JUNE 2014 REVISED FEBRUARY 2015CSD17573Q5B 30 V N-Channel NexFET Power MOSFETs1 FeaturesProduct Summary1 Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Ultra-Low RDS(on)VDS Drain-to-Source Voltage 30 V Low Thermal ResistanceQg Gate Charge Total (4.5 V
csd17575q3.pdf

Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD17575Q3SLPS489A JUNE 2014 REVISED AUGUST 2014CSD17575Q3 30-V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low RDS(on)VDS Drain-to-Source Voltage 30 V Low Thermal ResistanceQg Gate Charge Total (4.5V) 23 nC
Otros transistores... CSD17553Q5A , CSD17555Q5A , CSD17556Q5B , CSD17559Q5 , CSD17570Q5B , CSD17571Q2 , CSD17573Q5B , CSD17575Q3 , AON6380 , CSD17577Q3A , CSD17577Q5A , CSD17578Q3A , CSD17578Q5A , CSD17579Q3A , CSD17579Q5A , CSD18501Q5A , CSD18502KCS .
History: S80N10RN | IXTH12N120
History: S80N10RN | IXTH12N120



Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: JBE084M | JBE083NS | JBE083M | JMH70R430AK | JMH70R430AF | JMH65R980APLN | JMH65R980AKQ | JMH65R980AK | JMH65R980AF | JMH65R980ACFP | JMH65R640AK | JMH65R600MK | JMH65R600MF | JMPL1025AK | JMPL1025AE | JMPL0648PKQ
Popular searches
a1023 datasheet | 2sc1080 | 2sb618 | 2sc1328 | 2sc1845 transistor | a933 transistor datasheet | a1633 transistor | 2sa844