CSD18502KCS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CSD18502KCS
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 259 W
Voltaje máximo drenador - fuente |Vds|: 40 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 100 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2.1 V
Carga de la puerta (Qg): 25 nC
Tiempo de subida (tr): 7.3 nS
Conductancia de drenaje-sustrato (Cd): 900 pF
Resistencia entre drenaje y fuente RDS(on): 0.0029 Ohm
Paquete / Cubierta: TO-220
Búsqueda de reemplazo de MOSFET CSD18502KCS
CSD18502KCS Datasheet (PDF)
csd18502kcs.pdf
Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD18502KCSSLPS367B AUGUST 2012 REVISED JULY 2014CSD18502KCS 40-V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Ultra-Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-Source Voltage 40 V Avalanche RatedQg Gate Charge Total (10V
csd18502q5b.pdf
Sample & Support & ReferenceProduct Technical Tools &Buy Community DesignFolder Documents SoftwareCSD18502Q5BSLPS320A NOVEMBER 2012 REVISED JULY 2015CSD18502Q5B 40 V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Ultra-Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain to source voltage 40 V Avalanche RatedQg Gate
csd18509q5b.pdf
Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD18509Q5BSLPS476 JUNE 2014CSD18509Q5B N-Channel NexFET Power MOSFETs1 FeaturesProduct Summary1 Ultra-Low On ResistanceTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-Source Voltage 40 V Avalanche RatedQg Gate Charge Total (10 V) 150 nC Logic Leve
csd18501q5a.pdf
Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD18501Q5ASLPS319C JUNE 2012 REVISED JANUARY 2015CSD18501Q5A 40 V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Ultra low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-Source Voltage 40 V Avalanche RatedQg Gate Charge Total (4
csd18504q5a.pdf
Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD18504Q5ASLPS366E JUNE 2012 REVISED SEPTEMBER 2014CSD18504Q5A 40-V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Ultra-Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-Source Voltage 40 V Avalanche RatedQg Gate Charge Total
csd18503kcs.pdf
Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD18503KCSSLPS368A SEPTEMBER 2012 REVISED JANUARY 2015CSD18503KCS 40 V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Ultra Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-Source Voltage 40 V Avalanche RatedQg Gate Charge Tota
csd18504kcs.pdf
Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD18504KCSSLPS365A OCTOBER 2012 REVISED FEBRUARY 2015CSD18504KCS 40 V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Ultra Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-Source Voltage 40 V Avalanche RatedQg Gate Charge Total
csd18503q5a.pdf
Sample & Support & ReferenceProduct Technical Tools &Buy Community DesignFolder Documents SoftwareCSD18503Q5ASLPS358C JUNE 2012 REVISED JUNE 2015CSD18503Q5A 40 V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Ultra-Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-source voltage 40 V Avalanche RatedQg Gate ch
Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
