CSD18531Q5A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CSD18531Q5A
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 3.1 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 19 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.3 VQgⓘ - Carga de la puerta: 18 nC
trⓘ - Tiempo de subida: 7.8 nS
Cossⓘ - Capacitancia de salida: 380 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0046 Ohm
Paquete / Cubierta: SON5X6
- Selección de transistores por parámetros
CSD18531Q5A Datasheet (PDF)
csd18531q5a.pdf

Sample & Support & ReferenceProduct Technical Tools &Buy Community DesignFolder Documents SoftwareCSD18531Q5ASLPS321E JUNE 2012 REVISED AUGUST 2015CSD18531Q5A 60 V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Ultra-Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-source voltage 60 V Avalanche RatedQg Gate
csd18532kcs.pdf

Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD18532KCSSLPS361B AUGUST 2012 REVISED JULY 2014CSD18532KCS 60-V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Ultra-Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-Source Voltage 60 V Avalanche RatedQg Gate Charge Total (10
csd18537nkcs.pdf

Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD18537NKCSSLPS390A JUNE 2013 REVISED MARCH 2015CSD18537NKCS 60 V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Ultra Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-Source Voltage 60 V Avalanche RatedQg Gate Charge Total (1
csd18535kcs.pdf

Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD18535KCSSLPS531 MARCH 2015CSD18535KCS 60 V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Ultra-Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-Source Voltage 60 V Avalanche RatedQg Gate Charge Total (10 V) 63 nC Pb-Free T
Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: IRF7910PBF-1 | CHM41A2PAGP | IMW120R140M1H | 50N06G-TA3-T | VN2110
History: IRF7910PBF-1 | CHM41A2PAGP | IMW120R140M1H | 50N06G-TA3-T | VN2110



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