CSD18537NKCS
MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CSD18537NKCS
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 94
W
|Vds|ⓘ - Voltaje máximo drenador - fuente: 60
V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20
V
|Id|ⓘ - Corriente continua de drenaje: 50
A
Tjⓘ - Temperatura máxima de unión: 175
°C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 3.2
nS
Cossⓘ - Capacitancia
de salida: 136
pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.014
Ohm
Paquete / Cubierta:
TO-220
- Selección de transistores por parámetros
CSD18537NKCS
Datasheet (PDF)
..1. Size:395K texas
csd18537nkcs.pdf 
Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD18537NKCSSLPS390A JUNE 2013 REVISED MARCH 2015CSD18537NKCS 60 V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Ultra Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-Source Voltage 60 V Avalanche RatedQg Gate Charge Total (1
5.1. Size:1235K texas
csd18537nq5a.pdf 
Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD18537NQ5ASLPS391B JUNE 2013 REVISED JULY 2014CSD18537NQ5A 60-V N-Channel NexFET Power MOSFETs1 FeaturesProduct Summary1 Ultra-Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-Source Voltage 60 V Avalanche RatedQg Gate Charge Total (10
7.1. Size:751K texas
csd18532kcs.pdf 
Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD18532KCSSLPS361B AUGUST 2012 REVISED JULY 2014CSD18532KCS 60-V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Ultra-Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-Source Voltage 60 V Avalanche RatedQg Gate Charge Total (10
7.2. Size:358K texas
csd18535kcs.pdf 
Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD18535KCSSLPS531 MARCH 2015CSD18535KCS 60 V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Ultra-Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-Source Voltage 60 V Avalanche RatedQg Gate Charge Total (10 V) 63 nC Pb-Free T
7.3. Size:898K texas
csd18531q5a.pdf 
Sample & Support & ReferenceProduct Technical Tools &Buy Community DesignFolder Documents SoftwareCSD18531Q5ASLPS321E JUNE 2012 REVISED AUGUST 2015CSD18531Q5A 60 V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Ultra-Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-source voltage 60 V Avalanche RatedQg Gate
7.4. Size:467K texas
csd18533kcs.pdf 
Sample & Support & ReferenceProduct Technical Tools &Buy Community DesignFolder Documents SoftwareCSD18533KCSSLPS362C SEPTEMBER 2012 REVISED JUNE 2015CSD18533KCS 60 V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Ultra-Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-source voltage 60 V Avalanche RatedQg Ga
7.5. Size:1414K texas
csd18532q5b.pdf 
Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD18532Q5BSLPS322B NOVEMBER 2012 REVISED JULY 2014CSD18532Q5B 60-V N-Channel NexFET Power MOSFETs1 FeaturesProduct Summary1 Ultra-Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-Source Voltage 60 V Avalanche RatedQg Gate Charge Total (1
7.6. Size:956K texas
csd18534q5a.pdf 
Sample & Support & ReferenceProduct Technical Tools &Buy Community DesignFolder Documents SoftwareCSD18534Q5ASLPS389D OCTOBER 2012 REVISED JUNE 2015CSD18534Q5A 60 V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Ultra-Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-source voltage 60 V Avalanche RatedQg Gate
7.7. Size:748K texas
csd18534kcs.pdf 
Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD18534KCSSLPS383B SEPTEMBER 2012 REVISED OCTOBER 2014CSD18534KCS 60 V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Ultra-Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-Source Voltage 60 V Avalanche RatedQg Gate Charge Tota
7.8. Size:474K texas
csd18536kcs.pdf 
Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD18536KCSSLPS532 MARCH 2015CSD18536KCS 60 V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Ultra-Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-Source Voltage 60 V Avalanche RatedQg Gate Charge Total (10 V) 83 nC Pb-Free T
7.9. Size:1358K texas
csd18533q5a.pdf 
Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD18533Q5ASLPS388B SEPTEMBER 2012 REVISED JANUARY 2015CSD18533Q5A 60 V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Ultra Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-Source Voltage 60 V Avalanche RatedQg Gate Charge Tota
7.10. Size:1333K texas
csd18532nq5b.pdf 
CSD18532NQ5Bwww.ti.com SLPS440 JUNE 201360-V, N-Channel NexFET Power MOSFETsCheck for Samples: CSD18532NQ5B1FEATURESPRODUCT SUMMARY2 Ultra Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain to Source Voltage 60 V Avalanche RatedQg Gate Charge Total (10V) 49 nCQgd Gate Charge Gate to Drain 7.9 nC Pb Free Terminal PlatingV
7.11. Size:835K cn vbsemi
csd18534kcs.pdf 
CSD18534KCSwww.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.005 at VGS = 10 V 120 Material categorization:600.008 at VGS = 7.5 V100TO-220ABDGSN-Channel MOSFETG D SABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Symbol Limit
Otros transistores... WPB4002
, FDM15-06KC5
, FQD2N60CTM
, FDM47-06KC5
, FDPF045N10A
, FMD15-06KC5
, FDMS8672S
, FMD21-05QC
, AON7408
, FDMS86368F085
, FMD47-06KC5
, FDBL86361F085
, FMK75-01F
, FMM110-015X2F
, FMM150-0075X2F
, FMM22-05PF
, FMM22-06PF
.
History: RSD046P05FRA
| CS6N120P
| KI2325DS