CSD18563Q5A Todos los transistores

 

CSD18563Q5A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: CSD18563Q5A
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 3.2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 15 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.4 V
   Qgⓘ - Carga de la puerta: 7.3 nC
   trⓘ - Tiempo de subida: 6.3 nS
   Cossⓘ - Capacitancia de salida: 280 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0068 Ohm
   Paquete / Cubierta: SON5X6
     - Selección de transistores por parámetros

 

CSD18563Q5A Datasheet (PDF)

 ..1. Size:1358K  texas
csd18563q5a.pdf pdf_icon

CSD18563Q5A

Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD18563Q5ASLPS444B JULY 2013 REVISED JANUARY 2015CSD18563Q5A, 60 V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Ultra-Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-Source Voltage 60 V Avalanche RatedQg Gate Charge Total (1

 8.1. Size:751K  texas
csd18532kcs.pdf pdf_icon

CSD18563Q5A

Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD18532KCSSLPS361B AUGUST 2012 REVISED JULY 2014CSD18532KCS 60-V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Ultra-Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-Source Voltage 60 V Avalanche RatedQg Gate Charge Total (10

 8.2. Size:395K  texas
csd18537nkcs.pdf pdf_icon

CSD18563Q5A

Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD18537NKCSSLPS390A JUNE 2013 REVISED MARCH 2015CSD18537NKCS 60 V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Ultra Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-Source Voltage 60 V Avalanche RatedQg Gate Charge Total (1

 8.3. Size:358K  texas
csd18535kcs.pdf pdf_icon

CSD18563Q5A

Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD18535KCSSLPS531 MARCH 2015CSD18535KCS 60 V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Ultra-Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-Source Voltage 60 V Avalanche RatedQg Gate Charge Total (10 V) 63 nC Pb-Free T

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: STD5N52K3 | IRFN440 | PE506BA

 

 
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