CSD19505KCS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CSD19505KCS
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 300 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 150 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3.2 VQgⓘ - Carga de la puerta: 76 nC
trⓘ - Tiempo de subida: 16 nS
Cossⓘ - Capacitancia de salida: 1600 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0031 Ohm
Paquete / Cubierta: TO-220
Búsqueda de reemplazo de MOSFET CSD19505KCS
CSD19505KCS Datasheet (PDF)
csd19505kcs.pdf
Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD19505KCSSLPS480B JANUARY 2014 REVISED OCTOBER 2014CSD19505KCS 80 V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Ultra-Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-Source Voltage 80 V Avalanche RatedQg Gate Charge Total
csd19505kcs.pdf
Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD19505KCSSLPS480B JANUARY 2014 REVISED OCTOBER 2014CSD19505KCS 80 V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Ultra-Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-Source Voltage 80 V Avalanche RatedQg Gate Charge Total
csd19501kcs.pdf
Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD19501KCSSLPS478A JANUARY 2014 REVISED AUGUST 2014CSD19501KCS 80-V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Ultra-Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-Source Voltage 80 V Avalanche RatedQg Gate Charge Total (
csd19502q5b.pdf
Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD19502Q5BSLPS413A DECEMBER 2013 REVISED JUNE 2014CSD19502Q5B 80 V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Ultra-Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-Source Voltage 80 V Avalanche RatedQg Gate Charge Total (1
csd19506kcs.pdf
Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD19506KCSSLPS481B DECEMBER 2013 REVISED OCTOBER 2014CSD19506KCS 80 V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Ultra-Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-Source Voltage 80 V Avalanche RatedQg Gate Charge Total
csd19503kcs.pdf
Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD19503KCSSLPS479A DECEMBER 2013 REVISED AUGUST 2014CSD19503KCS 80-V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Ultra-Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-Source Voltage 80 V Avalanche RatedQg Gate Charge Total
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918