CSD19532Q5B Todos los transistores

 

CSD19532Q5B MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: CSD19532Q5B
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 3.1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 17 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 6 nS
   Cossⓘ - Capacitancia de salida: 706 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0049 Ohm
   Paquete / Cubierta: SON5X6
 

 Búsqueda de reemplazo de CSD19532Q5B MOSFET

   - Selección ⓘ de transistores por parámetros

 

CSD19532Q5B Datasheet (PDF)

 ..1. Size:1376K  texas
csd19532q5b.pdf pdf_icon

CSD19532Q5B

Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD19532Q5BSLPS414A DECEMBER 2013 REVISED JUNE 2014CSD19532Q5B 100 V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-Source Voltage 100 V Avalanche RatedQg Gate Charge Total (10 V)

 6.1. Size:367K  texas
csd19532ktt.pdf pdf_icon

CSD19532Q5B

Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD19532KTTSLPS553 OCTOBER 2015CSD19532KTT 100 V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Ultra-Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-Source Voltage 100 V Avalanche RatedQg Gate Charge Total (10 V) 44 nC Pb-Fr

 7.1. Size:404K  texas
csd19536kcs.pdf pdf_icon

CSD19532Q5B

Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD19536KCSSLPS485B JANUARY 2014 REVISED OCTOBER 2014CSD19536KCS 100 V N-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Ultra-Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-Source Voltage 100 V Avalanche RatedQg Gate Charge Tota

 7.2. Size:1281K  texas
csd19531q5a.pdf pdf_icon

CSD19532Q5B

Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD19531Q5ASLPS406B SEPTEMBER 2013 REVISED MAY 2014CSD19531Q5A 100 V N-Channel NexFET Power MOSFETs1 FeaturesProduct Summary1 Ultra-Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-Source Voltage 100 V Avalanche RatedQg Gate Charge Total

Otros transistores... CSD19501KCS , CSD19502Q5B , CSD19503KCS , CSD19505KCS , CSD19506KCS , CSD19531KCS , CSD19531Q5A , CSD19532KTT , IRF1404 , CSD19533KCS , CSD19533Q5A , CSD19534KCS , CSD19534Q5A , CSD19535KCS , CSD19535KTT , CSD19536KCS , CSD19536KTT .

History: BRCS070N08SRA | STP6635GH

 

 
Back to Top

 


 
.