CSD25301W1015 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CSD25301W1015

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 8 V

|Id|ⓘ - Corriente continua de drenaje: 2.2 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 2 nS

Cossⓘ - Capacitancia de salida: 90 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.075 Ohm

Encapsulados: WLP1.0X1.5

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CSD25301W1015 datasheet

 ..1. Size:515K  ciclon
 csd25301w1015.pdf pdf_icon

CSD25301W1015

P-Channel CICLON NexFET Power MOSFETs CSD25301W1015 Product Summary Features D D D D D D Ultra Low Qg & Qgd VDS -20 V Qg 2.0 nC Small Footprint S S S S S S Qgd 0.32 nC Low Profile 0.65mm height VGS= -1.5V 175 m RDS(on) S G S G S G VGS=-2.5V 80 m Pb Free VGS=-4.5V 62 m RoHS Compliant CSP 1.0 x 1.5 mm Wafer Vth -0.75 V Top Vi

 7.1. Size:214K  texas
 csd25303w1015.pdf pdf_icon

CSD25301W1015

CSD25303W1015 www.ti.com SLPS292 JANUARY 2011 P-Channel NexFET Power MOSFET Check for Samples CSD25303W1015 1 FEATURES PRODUCT SUMMARY Ultra Low Qg and Qgd TA = 25 C unless otherwise stated TYPICAL VALUE UNIT Small Footprint VDS Drain to Source Voltage 20 V Low Profile 0.62mm Height Qg Gate Charge Total (4.5V) 3.3 nC Pb Free Qgd Gate Charge Gate to Drain

 7.2. Size:133K  texas
 csd25302q2.pdf pdf_icon

CSD25301W1015

CSD25302Q2 www.ti.com SLPS234B NOVEMBER 2009 REVISED JANUARY 2012 P-Channel NexFET Power MOSFET 1 FEATURES PRODUCT SUMMARY Ultralow Qg and Qgd VDS Drain to Source Voltage 20 V Low Thermal Resistance Qg Gate Charge Total ( 4.5V) 2.6 nC Avalanche Rated Qgd Gate Charge Gate to Drain 0.5 nC VGS = 1.8V 71 m Pb Free Terminal Plating RDS(on) Drain to So

 7.3. Size:1090K  texas
 csd25304w1015.pdf pdf_icon

CSD25301W1015

Sample & Support & Product Technical Tools & Buy Community Folder Documents Software CSD25304W1015 SLPS510A JULY 2014 REVISED AUGUST 2014 CSD25304W1015 20-V P-Channel NexFET Power MOSFET 1 Features Product Summary 1 Ultra-Low Qg and Qgd TA = 25 C TYPICAL VALUE UNIT Small Footprint VDS Drain-to-Source Voltage 20 V Low Profile 0.62 mm Height Qg Gate Charge

MOSTRAR MÁS

Otros transistores... CSD23202W10, CSD23203W, CSD23381F4, CSD23382F4, CSD25201W15, CSD25202W15, CSD25211W1015, CSD25213W10, 2N7002, CSD25302Q2, CSD25303W1015, CSD25304W1015, CSD25310Q2, CSD25401Q3, CSD25402Q3A, CSD25404Q3, CSD25481F4