CSD25401Q3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: CSD25401Q3
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.8 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 13.6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1.4 V
   Qgⓘ - Carga de la puerta: 8.8 nC
   trⓘ - Tiempo de subida: 3.9 nS
   Cossⓘ - Capacitancia de salida: 560 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0115 Ohm
   Paquete / Cubierta: QFN3.3X3.3

Búsqueda de reemplazo de MOSFET CSD25401Q3

CSD25401Q3 Datasheet (PDF)

..1. Size:475K ciclon
csd25401q3.pdf

P-Channel CICLON NexFET Power MOSFETs CSD25401Q3 Product Summary Features Ultra Low Qg & Qgd VDS -20 VQg 8.8 nC Low Thermal Resistance D 1 8 S1 8G SQgd 2.1 nCD SD 2 7 S2 7 Low Rdson SD VGS = -2.5V 13.5 m SD 3 6 S3 6 D RDS(on) SVGS = -4.5V 8.7 m Pb Free Terminal Plating DG 4 5G 4 5 SVth -0.85 V RoHS Compliant

7.1. Size:400K texas
csd25404q3.pdf

Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD25404Q3SLPS570 NOVEMBER 2015CSD25404Q3 20 V P-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Ultra-Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-source voltage 20 V Low RDS(on)Qg Gate charge total (4.5 V) 10.9 nC

7.2. Size:995K texas
csd25402q3a.pdf

Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD25402Q3ASLPS454A DECEMBER 2013 REVISED JULY 2015CSD25402Q3A 20 V P-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Ultra-Low Qg and QgdTA = 25C TYPICAL VALUE UNIT Low Thermal ResistanceVDS Drain-to-source voltage 20 V Low RDS(on)Qg Gate charge total (

8.1. Size:1338K texas
csd25481f4.pdf

Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD25481F4SLPS420D SEPTEMBER 2013 REVISED OCTOBER 2014CSD25481F4 20 V P-Channel FemtoFET MOSFET1 FeaturesProduct Summary1 Ultra-Low On ResistanceTA = 25C TYPICAL VALUE UNIT Ultra-Low Qg and QgdVDS Drain-to-Source Voltage 20 V High Operating Drain CurrentQg Gate

8.2. Size:1337K texas
csd25483f4.pdf

Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD25483F4SLPS449D OCTOBER 2013 REVISED OCTOBER 2014CSD25483F4 20 V P-Channel FemtoFET MOSFET1 FeaturesProduct Summary1 Ultra-Low On-ResistanceTA = 25C TYPICAL VALUE UNIT Ultra-Low Qg and QgdVDS Drain-to-Source Voltage 20 V High Operating Drain CurrentQg Gate C

8.3. Size:1111K texas
csd25484f4.pdf

Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD25484F4SLPS551 MAY 2015CSD25484F4 20 V P-Channel FemtoFET MOSFET1 FeaturesProduct Summary1 Low On ResistanceTA = 25C TYPICAL VALUE UNIT Ultra-Low Qg and QgdVDS Drain-to-Source Voltage 20 V Low Threshold VoltageQg Gate Charge Total (4.5 V) 1090 pC Ultr

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