CSD75208W1015 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CSD75208W1015
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.75 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 6 V
|Id|ⓘ - Corriente continua de drenaje: 1.6 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1.1 VQgⓘ - Carga de la puerta: 1.9 nC
trⓘ - Tiempo de subida: 5 nS
Cossⓘ - Capacitancia de salida: 132 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.068 Ohm
Paquete / Cubierta: WLP1.0X1.5
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CSD75208W1015 Datasheet (PDF)
csd75208w1015.pdf
Sample & Support &Product Technical Tools &Buy CommunityFolder Documents SoftwareCSD75208W1015SLPS512 JULY 2014CSD75208W1015 Dual 20-V Common Source P-Channel NexFET Power MOSFET1 FeaturesProduct Summary1 Dual P-Channel MOSFETsTA = 25C TYPICAL VALUE UNIT Common Source ConfigurationVDS Drain-to-Source Voltage 20 V Small Footprint 1 mm 1.5 mmQ
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csd75207w15.pdf
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csd75204w15.pdf
CSD75204W15www.ti.com SLPS221A OCTOBER 2009REVISED OCTOBER 2010Dual P-Channel NexFET Power MOSFETCheck for Samples: CSD75204W151FEATURESPRODUCT SUMMARY Dual P-Ch MOSFETsVD1D2 Drain to Drain Voltage 20 V Common Source ConfigurationQg Gate Charge Total (-4.5V) 2.8 nC Small Footprint 1.5-mm 1.5-mmQgd Gate Charge Gate to Drain 0.6 nC Gate-Source
Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918