CSD87334Q3D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CSD87334Q3D
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 6 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
|Id|ⓘ - Corriente continua de drenaje: 20 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1.2 VQgⓘ - Carga de la puerta: 6.4 nC
trⓘ - Tiempo de subida: 7 nS
Cossⓘ - Capacitancia de salida: 453 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.006 Ohm
Paquete / Cubierta: SON3.3X3.3
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CSD87334Q3D Datasheet (PDF)
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Support &Product Order Technical Tools &CommunityFolder Now Documents SoftwareCSD87333Q3DSLPS350A FEBRUARY 2014 REVISED JANUARY 2017CSD87333Q3D Synchronous Buck NexFET Power Block1 Features 3 DescriptionThe CSD87333Q3D NexFET power block is an1 Half-Bridge Power Blockoptimized design for synchronous buck and boost Optimized for High-Duty Cycleapplic
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Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
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Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918