KF16N25D MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: KF16N25D
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 85 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 250 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 13 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 19 nS
Cossⓘ - Capacitancia de salida: 140 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.24 Ohm
Encapsulados: DPAK
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KF16N25D datasheet
kf16n25d.pdf
KF16N25D SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent A K DIM MILLIMETERS avalanche characteristics. It is mainly suitable for DC/DC Converters L C D _ A 6.60 + 0.20 _ B 6.10 + 0.20 and switching mode power
kf16n25f.pdf
KF16N25F SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description C A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converters E DIM MILLIMETERS _ A 10.16 0.2 + and switching mode power supplies. _ B 15.8
kf16n50f.pdf
KF16N50P/F SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF16N50P A This planar stripe MOSFET has better characteristics, such as fast O C switching time, low on resistance, low gate charge and excellent F avalanche characteristics. It is mainly suitable for active power factor E DIM MILLIMETERS G correction and switching mode power supp
Otros transistores... KDS9952A , KDV303N , KDW2503N , KDW2504P , KDW2521C , KDW258P , KE3587-G , KF10N65F , IRFB4227 , KF16N25F , KF19N20D , KF19N20F , KF4N60D , KF4N60F , KF4N65FM , KF5N25D , KF5N25F .
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