KF4N60F Todos los transistores

 

KF4N60F MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: KF4N60F

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 37.9 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 4 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 30 nS

Cossⓘ - Capacitancia de salida: 54 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 2.5 Ohm

Encapsulados: TO-220IS

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KF4N60F datasheet

 ..1. Size:382K  kec
 kf4n60f.pdf pdf_icon

KF4N60F

KF4N60F SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description C A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and E DIM MILLIMETERS switching mode power supplies. _ A 10.16 0.2 + _ B 15.8

 8.1. Size:385K  kec
 kf4n60d.pdf pdf_icon

KF4N60F

KF4N60D/I SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF4N60D This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent A K DIM MILLIMETERS avalanche characteristics. It is mainly suitable for electronic ballast and L C D _ A 6.60 + 0.20 switching mode power supp

 9.1. Size:382K  kec
 kf4n65fm.pdf pdf_icon

KF4N60F

KF4N65FM SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description C A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor E DIM MILLIMETERS _ A 10.16 0.2 + correction and switching mode power suppli

 9.2. Size:414K  kec
 kf4n65p f.pdf pdf_icon

KF4N60F

KF4N65P/F SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF4N65P A This planar stripe MOSFET has better characteristics, such as fast O C switching time, low on resistance, low gate charge and excellent F avalanche characteristics. It is mainly suitable for active power factor E DIM MILLIMETERS G correction and switching mode power suppli

MOSTRAR MÁS

Otros transistores... KDW258P , KE3587-G , KF10N65F , KF16N25D , KF16N25F , KF19N20D , KF19N20F , KF4N60D , 2N7000 , KF4N65FM , KF5N25D , KF5N25F , KF5N40D , KF5N50FR , KF5N50PR , KF5N50PS , KF5N65I .

History: HCD80R1K2 | JCS10N60BT | IRF7342QPBF | SWB075R06ET | AUIRF7759L2TR | BF999 | SUD19P06-60L

 

 

 

 

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